Product Information

BUK9D23-40EX

BUK9D23-40EX electronic component of Nexperia

Datasheet
Trench MOSFET N-channel 40 V 19 A 23m Ohm 6-Pin SOT-1220 T/R
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.3607 ea
Line Total: USD 0.36

8602 - Global Stock
Ships to you between
Thu. 30 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
731 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

BUK9D23-40EX
Nexperia

1 : USD 0.4345
10 : USD 0.3565
25 : USD 0.3554
50 : USD 0.344
100 : USD 0.2495
250 : USD 0.2469
500 : USD 0.199
1000 : USD 0.142

1070 - WHS 2


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

BUK9D23-40EX
Nexperia

1 : USD 0.2879
10 : USD 0.2636
25 : USD 0.2632
50 : USD 0.2591
100 : USD 0.2187
250 : USD 0.2174
500 : USD 0.1911
1000 : USD 0.1786

14550 - WHS 3


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 3000
Multiples : 3000

Stock Image

BUK9D23-40EX
Nexperia

3000 : USD 0.1626

1503 - WHS 4


Ships to you between
Fri. 31 May to Wed. 05 Jun

MOQ : 5
Multiples : 5

Stock Image

BUK9D23-40EX
Nexperia

5 : USD 0.3436
50 : USD 0.2775
150 : USD 0.2492
500 : USD 0.2138
3000 : USD 0.1982
6000 : USD 0.1888

8602 - WHS 5


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

Stock Image

BUK9D23-40EX
Nexperia

1 : USD 0.3607
10 : USD 0.3002
100 : USD 0.2218
500 : USD 0.1863
1000 : USD 0.1578
3000 : USD 0.1412
9000 : USD 0.1412
24000 : USD 0.1376
45000 : USD 0.1341

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Hts Code
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
LoadingGif

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Additional Infomation About Product

BUK9D23-40E 40 V, N-channel Trench MOSFET 13 December 2017 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Extended temperature range T = 175 C j Side wettable flanks for optical solder inspection Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm Trench MOSFET technology AEC-Q101 qualified 3. Applications Relay driver High-speed line driver Low-side load switch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - 40 V DS j V gate-source voltage -15 - 15 V GS I drain current V = 10 V T = 25 C - - 19 A D GS sp P total power dissipation T = 25 C - - 15 W tot sp Static characteristics R drain-source on-state V = 10 V I = 8 A T = 25 C - 18 23 m DSon GS D j resistanceNexperia BUK9D23-40E 40 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 D drain D 1 6 2 D drain 7 2 5 G 3 G gate 3 4 8 4 S source mbb076 S 5 D drain Transparent top view DFN2020MD-6 (SOT1220) 6 D drain 7 D drain 8 S source 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK9D23-40E DFN2020MD-6 DFN2020MD-6: plastic thermal enhanced ultra thin small outline SOT1220 package no leads 6 terminals 7. Marking Table 4. Marking codes Type number Marking code 1 BUK9D23-40E %4B 1 % = placeholder for manufacturing site code BUK9D23-40E All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 13 December 2017 2 / 15

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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