Product Information

BUK9M6R6-30EX

BUK9M6R6-30EX electronic component of Nexperia

Datasheet
MOSFET BUK9M6R6-30E/MLFPAK/REEL 7" Q1
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1500: USD 0.4307 ea
Line Total: USD 646.05

0 - Global Stock
MOQ: 1500  Multiples: 1500
Pack Size: 1500

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0 - WHS 1


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 1500
Multiples : 1500

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BUK9M6R6-30EX
Nexperia

1500 : USD 0.4342
3000 : USD 0.4116
7500 : USD 0.4087
9000 : USD 0.3888
10500 : USD 0.3793
24000 : USD 0.375

0 - WHS 2


Ships to you between Mon. 27 May to Wed. 29 May

MOQ : 1
Multiples : 1

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BUK9M6R6-30EX
Nexperia

1 : USD 2.6408
10 : USD 0.9665
100 : USD 0.7115
500 : USD 0.5633
1500 : USD 0.4132

0 - WHS 3


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 1
Multiples : 1

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BUK9M6R6-30EX
Nexperia

1 : USD 1.0719
5 : USD 0.9594
25 : USD 0.6459
67 : USD 0.6106

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Additional Infomation About Product

BUK9M6R6-30E N-channel 30 V, 6.6 m logic level MOSFET in LFPAK33 19 September 2016 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 C rating True logic level gate with V rating of greater than 0.5 V at 175 C GS(th) 3. Applications 12 V automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage 25 C T 175 C - - 30 V DS j I drain current V = 5 V T = 25 C Fig. 2 - - 70 A D GS mb P total power dissipation T = 25 C Fig. 1 - - 75 W tot mb Static characteristics R drain-source on-state V = 5 V I = 20 A T = 25 C Fig. 11 - 5.5 6.6 m DSon GS D j resistance Dynamic characteristics Q gate-drain charge I = 20 A V = 24 V V = 5 V - 7.8 - nC GD D DS GS T = 25 C Fig. 13 Fig. 14 jNexperia BUK9M6R6-30E N-channel 30 V, 6.6 m logic level MOSFET in LFPAK33 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 S Source D 2 S Source G 3 S Source mbb076 S 4 G Gate mb D Mounting base connected to 1 2 3 4 drain LFPAK33 (SOT1210) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK9M6R6-30E LFPAK33 Plastic single ended surface mounted package SOT1210 (LFPAK33) 8 leads 7. Marking Table 4. Marking codes Type number Marking code BUK9M6R6-30E 96E630 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage 25 C T 175 C - 30 V DS j V drain-gate voltage R = 20 k - 30 V DGR GS V gate-source voltage DC T 175 C -10 10 V GS j Pulsed T 175 C 1 2 -15 15 V j P total power dissipation T = 25 C Fig. 1 - 75 W tot mb I drain current V = 5 V T = 25 C Fig. 2 - 70 A D GS mb V = 5 V T = 100 C Fig. 2 - 54.7 A GS mb I peak drain current pulsed t 10 s T = 25 C Fig. 3 - 309 A DM p mb BUK9M6R6-30E All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 19 September 2016 2 / 13

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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