Product Information

BUK9M85-60EX

BUK9M85-60EX electronic component of Nexperia

Datasheet
MOSFET BUK9M85-60E/MLFPAK/REEL 7" Q1/
Manufacturer: Nexperia
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1: USD 0.8412 ea
Line Total: USD 0.84

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MOQ: 1  Multiples: 1
Pack Size: 1

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BUK9M85-60EX
Nexperia

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BUK9M85-60EX
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BUK9M85-60EX
Nexperia

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BUK9M85-60EX
Nexperia

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BUK9M85-60EX
Nexperia

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BUK9M85-60EX
Nexperia

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25 : USD 0.4777
44 : USD 0.3609
119 : USD 0.342

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Taric
Brand Category
LoadingGif

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Additional Infomation About Product

BUK9M85-60E N-channel 60 V, 85 m logic level MOSFET in LFPAK33 19 September 2016 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 C rating True logic level gate with V rating of greater than 0.5 V at 175 C GS(th) 3. Applications 12 V automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage 25 C T 175 C - - 60 V DS j I drain current V = 5 V T = 25 C Fig. 2 - - 12.8 A D GS mb P total power dissipation T = 25 C Fig. 1 - - 31 W tot mb Static characteristics R drain-source on-state V = 5 V I = 5 A T = 25 C Fig. 11 - 68 85 m DSon GS D j resistance Dynamic characteristics Q gate-drain charge I = 5 A V = 48 V V = 5 V - 2 - nC GD D DS GS T = 25 C Fig. 13 Fig. 14 jNexperia BUK9M85-60E N-channel 60 V, 85 m logic level MOSFET in LFPAK33 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 S Source D 2 S Source G 3 S Source mbb076 S 4 G Gate mb D Mounting base connected to 1 2 3 4 drain LFPAK33 (SOT1210) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK9M85-60E LFPAK33 Plastic single ended surface mounted package SOT1210 (LFPAK33) 8 leads 7. Marking Table 4. Marking codes Type number Marking code BUK9M85-60E 98560E 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage 25 C T 175 C - 60 V DS j V drain-gate voltage R = 20 k - 60 V DGR GS V gate-source voltage DC T 175 C -10 10 V GS j Pulsed T 175 C 1 2 -15 15 V j P total power dissipation T = 25 C Fig. 1 - 31 W tot mb I drain current V = 5 V T = 25 C Fig. 2 - 12.8 A D GS mb V = 5 V T = 100 C Fig. 2 - 9 A GS mb I peak drain current pulsed t 10 s T = 25 C Fig. 3 - 51 A DM p mb BUK9M85-60E All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 19 September 2016 2 / 13

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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