X-On Electronics has gained recognition as a prominent supplier of BUK9Y104-100B,115 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BUK9Y104-100B,115 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BUK9Y104-100B,115 Nexperia

BUK9Y104-100B,115 electronic component of Nexperia
BUK9Y104-100B,115 Nexperia
BUK9Y104-100B,115 MOSFETs
BUK9Y104-100B,115  Semiconductors

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See Product Specifications
Part No. BUK9Y104-100B,115
Manufacturer: Nexperia
Category: MOSFETs
Description: MOSFET N-CHANNEL TRENCHMOS LOGIC LEVEL FET
Datasheet: BUK9Y104-100B,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1500: USD 0.2941 ea
Line Total: USD 441.15 
Availability - 11640
Ship by Wed. 04 Jun to Tue. 10 Jun
MOQ: 1500  Multiples: 1500
Pack Size: 1500
Availability Price Quantity
11640
Ship by Wed. 04 Jun to Tue. 10 Jun
MOQ : 1500
Multiples : 1500
1500 : USD 0.2941
3000 : USD 0.2911

7518
Ship by Mon. 02 Jun to Wed. 04 Jun
MOQ : 1
Multiples : 1
1 : USD 0.9713
10 : USD 0.7125
25 : USD 0.6828
100 : USD 0.4301
500 : USD 0.3707
1000 : USD 0.3421
1500 : USD 0.2948
3000 : USD 0.2937

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Gate Charge Qg
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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We are delighted to provide the BUK9Y104-100B,115 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BUK9Y104-100B,115 and other electronic components in the MOSFETs category and beyond.

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BUK9Y104-100B N-channel TrenchMOS logic level FET Rev. 04 7 April 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits Low conduction losses due to low Suitable for logic level gate drive on-state resistance sources Q101 compliant Suitable for thermally demanding environments due to 175 C rating 1.3 Applications 12 V, 24 V and 42 V loads General purpose power switching Automotive systems Solenoid drivers DC-to-DC converters 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source T 25 C T 175 C - - 100 V DS j j voltage I drain current V =5V T =25C --14.8A D GS mb see Figure 1 see Figure 3 P total power T=25C --59 W tot mb dissipation Static characteristics R drain-source V =10V I =5A T = 25 C - 86 99 m DSon GS D j on-state V =5V I =5A T =25C -91 104m GS D j resistance see Figure 11 see Figure 12 Avalanche ruggedness E non-repetitive I =14.8 A V 100 V --35 mJ DS(AL)S D sup drain-source R =50 V =5V GS GS avalanche energy T = 25 C unclamped j(init) Dynamic characteristics Q gate-drain charge V =5V I =5A -4.7 -nC GD GS D V =80 V see Figure 13 DSBUK9Y104-100B Nexperia N-channel TrenchMOS logic level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S source mb D 2S source 3S source G 4 G gate mbb076 S mb D mounting base connected to 1234 drain SOT669 (LFPAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK9Y104-100B LFPAK plastic single-ended surface-mounted package (LFPAK) 4 leads SOT669 BUK9Y104-100B All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 04 7 April 2010 2 of 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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