AUIRFS4310 AUTOMOTIVE GRADE AUIRFSL4310 HEXFET Power MOSFET Features V 100V DSS Advanced Process Technology R typ. 5.6m DS(on) Ultra Low On-Resistance max. 7.0m 175C Operating Temperature I 130A Fast Switching D (Silicon Limited) Repetitive Avalanche Allowed up to Tjmax I 75A D (Package Limited) Lead-Free, RoHS Compliant Automotive Qualified * D D Description Specifically designed for Automotive applications, this HEXFET S S Power MOSFET utilizes the latest processing techniques to achieve D G G extremely low on-resistance per silicon area. Additional features of 2 D Pak TO-262 this design are a 175C junction operating temperature, fast AUIRFSL4310 AUIRFS4310 switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and G D S reliable device for use in Automotive applications and a wide variety of other applications Gate Drain Source Standard Pack Base part number Package Type Orderable Part Number Form Quantity AUIRFSL4310 TO-262 Tube 50 AUIRFSL4310 Tube 50 AUIRFS4310 2 AUIRFS4310 D -Pak Tape and Reel Left 800 AUIRFS4310TRL Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 130 D C GS I T = 100C Continuous Drain Current, V 10V (Silicon Limited) 92 D C GS A I T = 25C Continuous Drain Current, V 10V (Package Limited) 75 D C GS Pulsed Drain Current 550 I DM P T = 25C Maximum Power Dissipation 300 W D C Linear Derating Factor 2.0 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy (Thermally Limited) 980 AS mJ I Avalanche Current See Fig.14,15, 22a, 22b A AR E Repetitive Avalanche Energy mJ AR dv/dt Peak Diode Recovery 14 V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Case 0.50 JC C/W 2 R Junction-to-Ambient (PCB Mount), D Pak 40 JA HEXFET is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2015-10-27 AUIRFS/SL4310 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 100 V V = 0V, I = 250A (BR)DSS GS D V / T Breakdown Voltage Temp. Coefficient 0.064 V/C Reference to 25C, I = 1mA (BR)DSS J D R Static Drain-to-Source On-Resistance 5.6 7.0 m V = 10V, I = 75A DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D gfs Forward Trans conductance 160 S V = 50V, I = 75A DS D R Gate Resistance 1.4 = 1.0MHz, open drain G 20 V = 100V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 100V,V = 0V,T =125C DS GS J I Gate-to-Source Forward Leakage 100 V = 20V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS Dynamic Electrical Characteristics T = 25C (unless otherwise specified) J Q Total Gate Charge 170 250 I = 75A g D Q Gate-to-Source Charge 46 nC V = 80V gs DS Q Gate-to-Drain Charge 62 V = 10V GS gd t Turn-On Delay Time 26 V = 65V d(on) DD t Rise Time 110 I = 75A r D ns t Turn-Off Delay Time 68 R = 2.6 d(off) G t Fall Time 78 V = 10V f GS C Input Capacitance 7670 V = 0V iss GS C Output Capacitance 540 V = 50V oss DS C Reverse Transfer Capacitance 280 = 1.0MHz, See Fig. 5 rss pF Effective Output Capacitance (Energy Related) 650 V = 0V, V = 0V to 80V C oss eff.(ER) GS DS C Effective Output Capacitance (Time Related) 720.1 V = 0V, V = 0V to 80V oss eff.(TR) GS DS Diode Characteristics Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol I 130 S (Body Diode) showing the A integral reverse Pulsed Source Current I 550 SM (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C,I = 75A,V = 0V SD J S GS 45 68 T = 25C V = 85V J DD t Reverse Recovery Time ns rr 55 83 T = 125C I = 75A, J F 82 120 T = 25C di/dt = 100A/s J Q Reverse Recovery Charge nC rr 120 180 T = 125C J I Reverse Recovery Current 3.3 A T = 25C RRM J t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) S D on Notes: Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 75A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. Repetitive rating pulse width limited by max. junction temperature. Limited by T starting T = 25C, L = 0.35mH, R = 25 , I = 75A, V =10V. Part not recommended for use above this value. Jmax, J G AS GS I 75A, di/dt 550A/s, V V , T 175C. SD DD (BR)DSS J Pulse width 400s duty cycle 2%. C eff. (TR) is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V . oss oss DS DSS C eff. (ER) is a fixed capacitance that gives the same energy as C while V is rising from 0 to 80% V . oss oss DS DSS When mounted on 1 square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note AN-994 R is measured at T approximately 90C. J 2 2015-10-27