BUK9Y19-100E,115 Nexperia

BUK9Y19-100E,115 electronic component of Nexperia
BUK9Y19-100E,115 Nexperia
BUK9Y19-100E,115 MOSFETs
BUK9Y19-100E,115  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of BUK9Y19-100E,115 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BUK9Y19-100E,115 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. BUK9Y19-100E,115
Manufacturer: Nexperia
Category: MOSFETs
Description: MOSFET 100V N-CH LOGIC LEVEL IN LFPA
Datasheet: BUK9Y19-100E,115 Datasheet (PDF)
Price (USD)
1: USD 1.1087 ea
Line Total: USD 1.11 
Availability : 0
  
QtyUnit Price
1$ 1.1087
10$ 0.7812
100$ 0.6391
500$ 0.616
1000$ 0.594
1500$ 0.495
3000$ 0.495
9000$ 0.495
24000$ 0.4631

Availability 0
Ship by Mon. 27 Oct to Fri. 31 Oct
MOQ : 1500
Multiples : 1500
QtyUnit Price
1500$ 0.506
3000$ 0.4988
9000$ 0.4744
24000$ 0.4696


Availability 0
Ship by Mon. 27 Oct to Fri. 31 Oct
MOQ : 316
Multiples : 1
QtyUnit Price
316$ 0.8232
488$ 0.5334


Availability 0
Ship by Mon. 27 Oct to Fri. 31 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.6159
10$ 1.2531
100$ 0.9337
500$ 0.882


Availability 0
Ship by Thu. 23 Oct to Mon. 27 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.1087
10$ 0.7812
100$ 0.6391
500$ 0.616
1000$ 0.594
1500$ 0.495
3000$ 0.495
9000$ 0.495
24000$ 0.4631

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Brand
Factory Pack Quantity :
Configuration
Transistor Type
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BUK9Y19-100E,115 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BUK9Y19-100E,115 and other electronic components in the MOSFETs category and beyond.

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BUK9Y19-100E N-channel 100 V, 19 m logic level MOSFET in LFPAK56 7 November 2016 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Applications 12 V, 24 V and 48 V Automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching 3. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage 25 C T 175 C - - 100 V DS j I drain current V = 5 V T = 25 C Fig. 2 - - 56 A D GS mb P total power dissipation T = 25 C Fig. 1 - - 167 W tot mb Static characteristics R drain-source on-state V = 5 V I = 15 A T = 25 C Fig. 11 - 14.6 19 m DSon GS D j resistance Dynamic characteristics Q gate-drain charge I = 15 A V = 80 V V = 5 V - 14.1 - nC GD D DS GS T = 25 C Fig. 13 Fig. 14 jNexperia BUK9Y19-100E N-channel 100 V, 19 m logic level MOSFET in LFPAK56 4. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 S source mb D 2 S source G 3 S source mbb076 S 4 G gate 1 2 3 4 mb D mounting base connected to LFPAK56 Power- drain SO8 (SOT669) 5. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK9Y19-100E LFPAK56 Plastic single-ended surface-mounted package SOT669 Power-SO8 (LFPAK56 Power-SO8) 4 leads 6. Marking Table 4. Marking codes Type number Marking code BUK9Y19-100E 91910E 7. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage 25 C T 175 C - 100 V DS j V drain-gate voltage R = 20 k - 100 V DGR GS V gate-source voltage DC T 175 C -10 10 V GS j Pulsed T 175 C 1 2 -15 15 V j P total power dissipation T = 25 C Fig. 1 - 167 W tot mb I drain current V = 5 V T = 25 C Fig. 2 - 56 A D GS mb V = 5 V T = 100 C Fig. 2 - 40 A GS mb I peak drain current pulsed t 10 s T = 25 C Fig. 3 - 226 A DM p mb BUK9Y19-100E All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 7 November 2016 2 / 13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
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