X-On Electronics has gained recognition as a prominent supplier of BZV55-C5V6 across the USA, India, Europe, Australia, and various other global locations. BZV55-C5V6 are a product manufactured by Nexperia. We provide cost-effective solutions for BZV55-C5V6, ensuring timely deliveries around the world.

BZV55-C5V6 Nexperia

BZV55-C5V6 electronic component of Nexperia
BZV55-C5V6 Nexperia
BZV55-C5V6 Unclassified
BZV55-C5V6

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See Product Specifications
Part No. BZV55-C5V6
Manufacturer: Nexperia
Category: Unclassified
Description: DIODE, ZENER, 5.6V, 500MW
Datasheet: BZV55-C5V6 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
500: USD 0.0714 ea
Line Total: USD 35.7 
Availability - 0
MOQ: 500  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 04 Jun to Tue. 10 Jun
MOQ : 500
Multiples : 1
500 : USD 0.0714
1000 : USD 0.0559

   
Manufacturer
Product Category
Brand
Zener Voltage Vz Typ
Power Dissipation Pd
Diode Case Style
Zener Tolerance ±
No. Of Pins
Operating Temperature Max
Product Range
Svhc
Diode Type
Operating Temperature Min
Operating Temperature Range
Power Dissipation Max
Power Dissipation Ptot Max
Smd Marking
Termination Type
Test Current
Tolerance
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BZV55-C5V6 from our Nexperia manufacturer, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BZV55-C5V6 and other electronic components in the Nexperia manufacturer and beyond.

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BZV55 series Voltage regulator diodes Rev. 5 26 January 2011 Product data sheet 1. Product profile 1.1 General description Low-power voltage regulator diodes in small hermetically sealed glass SOD80C Surface-Mounted Device (SMD) packages. The diodes are available in the normalized E24 2 % (BZV55-B) and approximately 5 % (BZV55-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 V to 75 V. 1.2 Features and benefits Non-repetitive peak reverse power Wide working voltage range: dissipation: 40 W nominal 2.4 V to 75 V (E24 range) Total power dissipation: 500 mW Low differential resistance Two tolerance series: 2%and 5% Small hermetically sealed glass SMD package 1.3 Applications General regulation functions 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit forward voltage I =10mA - - 0.9 V V F F [1] non-repetitive peak -- 40 W P ZSM reverse power dissipation [1] t =100 s; square wave; T =25 C prior to surge p j 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol [1] 1 cathode 2 anode ka 1 2 006aaa152 [1] The marking band indicates the cathode.BZV55 series NXP Semiconductors Voltage regulator diodes 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BZV55-B2V4 to - hermetically sealed glass surface-mounted SOD80C [1] BZV55-C75 package; 2 connectors [1] The series consists of 74 types with nominal working voltages from 2.4 V to 75 V. 4. Marking Table 4. Marking codes Type number Marking code BZV55-B2V4 to BZV55-C75 marking band 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit I forward current - 250 mA F [1] I non-repetitive peak -see ZSM reverse current Table 8 and 9 [1] P non-repetitive peak -40 W ZSM reverse power dissipation [2] P total power dissipation T 50 C -400 mW tot amb [2] T 50 C -500 mW tp T storage temperature 65 +200 C stg T junction temperature 65 +200 C j [1] t =100 s; square wave; T =25 C prior to surge p j [2] Device mounted on a ceramic substrate of 10 10 0.6 mm. 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit [1] R thermal resistance from in free air - - 380 K/W th(j-a) junction to ambient R thermal resistance from - - 300 K/W th(j-sp) junction to solder point [1] Device mounted on a ceramic substrate of 10 10 0.6 mm. BZV55_SER All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 5 26 January 2011 2 of 13

NEXPERIA USA INC
Nexperia USA Inc.
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