MJD44H11J Nexperia

MJD44H11J electronic component of Nexperia
MJD44H11J Nexperia
MJD44H11J Bipolar Transistors - BJT
MJD44H11J  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of MJD44H11J Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MJD44H11J Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. MJD44H11J
Manufacturer: Nexperia
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT TRANS BIPOLAR
Datasheet: MJD44H11J Datasheet (PDF)
Price (USD)
1: USD 0.8875 ea
Line Total: USD 0.89 
Availability : 0
  
QtyUnit Price
1$ 0.8875
10$ 0.55
100$ 0.3323
500$ 0.2464
1000$ 0.22
2500$ 0.1914
5000$ 0.1771
10000$ 0.1771
25000$ 0.1738

Availability 1329
Ship by Mon. 17 Nov to Fri. 21 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.0256
10$ 0.8718
30$ 0.6057
100$ 0.4886
500$ 0.4641
1000$ 0.449

   
Manufacturer
Product Category
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Hts Code
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MJD44H11J from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MJD44H11J and other electronic components in the Bipolar Transistors - BJT category and beyond.

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MJD44H11 80 V, 8 A NPN high power bipolar transistor 12 September 2019 Product data sheet 1. General description NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. PNP complement: MJD45H11 2. Features and benefits High thermal power dissipation capability High energy efficiency due to less heat generation Electrically similar to popular MJD44H series Low collector emitter saturation voltage Fast switching speeds 3. Applications Power management Load switch Linear mode voltage regulator Constant current drive backlighting application Motor drive Relay replacement 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter - - 80 V CEO voltage I collector current - - 8 A C I peak collector current single pulse t 1 ms - - 16 A CM p h DC current gain V = 1 V I = 2 A T = 25 C 60 - - FE CE C ambNexperia MJD44H11 80 V, 8 A NPN high power bipolar transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol mb 1 B base E 2 C collector B 3 E emitter C mb mb C mounting base connected aaa-029889 to collector 2 1 3 DPAK (SOT428C) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version MJD44H11 DPAK Plastic single-ended surface-mounted package (DPAK) 3 leads SOT428C (one lead cropped) 7. Marking Table 4. Marking codes Type number Marking code MJD44H11 MJD44H11 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC601134). Symbol Parameter Conditions Min Max Unit V collector-emitter voltage - 80 V CEO V emitter-base voltage open collector - 6 V EBO I collector current - 8 A C I peak collector current single pulse t 1 ms - 16 A CM p P total power dissipation T 25 C 1 - 20 W tot mb T 25 C 2 - 1.75 W amb T junction temperature - 150 C j T ambient temperature -55 150 C amb T storage temperature -65 150 C stg 1 Total power dissipation junction to mounting base. 2 2 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated mounting pad for collector 1 cm . MJD44H11 All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2019. All rights reserved Product data sheet 12 September 2019 2 / 12

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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