MJD45H11AJ Nexperia

MJD45H11A 80 V, 8 A PNP high power bipolar transistor 3 February 2021 Product data sheet 1. General description PNP high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. NPN complement: MJD44H11A 2. Features and benefits High thermal power dissipation capability High energy efficiency due to less heat generation Electrically similar to popular MJD45H series Low collector emitter saturation voltage Fast switching speeds AEC-Q101 qualified 3. Applications Power management Load switch Linear mode voltage regulator Constant current drive backlighting application Motor drive Relay replacement 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter open base - - -80 V CEO voltage I collector current - - -8 A C I peak collector current single pulse t 1 ms - - -16 A CM p h DC current gain V = -1 V I = -2 A T = 25 C 60 - - FE CE C ambNexperia MJD45H11A 80 V, 8 A PNP high power bipolar transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol mb 1 B base E 2 C collector B 3 E emitter C mb mb C mounting base connected aaa-029523 to collector 2 1 3 DPAK (SOT428C) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version MJD45H11A DPAK Plastic single-ended surface-mounted package (DPAK) 3 leads SOT428C (one lead cropped) 7. Marking Table 4. Marking codes Type number Marking code MJD45H11A MJD45H11A 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V collector-emitter voltage open base - -80 V CEO V emitter-base voltage open collector - -6 V EBO I collector current - -8 A C I peak collector current single pulse t 1 ms - -16 A CM p P total power dissipation T 25 C 1 - 20 W tot mb T 25 C 2 - 1.75 W amb T junction temperature - 150 C j T ambient temperature -55 150 C amb T storage temperature -65 150 C stg 1 Total power dissipation junction to mounting base. 2 2 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated mounting pad for collector 1 cm . MJD45H11A All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2021. All rights reserved Product data sheet 3 February 2021 2 / 12