X-On Electronics has gained recognition as a prominent supplier of NX1029XH MOSFETs across the USA, India, Europe, Australia, and various other global locations. NX1029XH MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.
We are delighted to provide the NX1029XH from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NX1029XH and other electronic components in the MOSFETs category and beyond.
NX1029X 60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET Rev. 1 12 August 2011 Product data sheet 1. Product profile 1.1 General description Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible ESD protection up to 2 kV (N-channel) and 1 kV (P-channel) Very fast switching AEC-Q101 qualified Trench MOSFET technology 1.3 Applications Level shifter Load switch Power supply converter Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit TR2 (P-channel) V drain-source voltage T =25C - - -50 V DS j V gate-source voltage -20 - 20 V GS 1 I drain current V =-10 V T =25C - - -170 mA D GS amb TR1 (N-channel) V drain-source voltage T =25C - - 60 V DS j V gate-source voltage -20 - 20 V GS 1 I drain current V =10V T =25C - - 330 mA D GS amb TR1 (N-channel), Static characteristics R drain-source on-state V =10V I =500 mA -1 1.6 DSon GS D resistance pulsed t 300 s p 0.01 T =25C j TR2 (P-channel), Static characteristics R drain-source on-state V =-10 V I =-100mA -4.5 7.5 DSon GS D resistance T =25C j 2 1 Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm .NX1029X Nexperia 60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S1 source TR1 6 5 4 D1 D2 2 G1 gate TR1 3D2 drain TR2 G1 G2 4S2 source TR2 5 G2 gate TR2 12 3 6D1 drain TR1 SOT666 (SOT666) S1 S2 017aaa262 3. Ordering information Table 3. Ordering information Type number Package Name Description Version NX1029X SOT666 plastic surface-mounted package 6 leads SOT666 4. Marking Table 4. Marking codes 1 Type number Marking code NX1029X AD 1 % = placeholder for manufacturing site code. NX1029X All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 12 August 2011 2 of 20
