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NX1029XH Nexperia
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LDO Regulator Pos 1.2V 1A 4-Pin(3+Tab) SC-73 T/R Stock : 0
LDO Regulator Pos 2.5V 1A 4-Pin(3+Tab) SC-73 T/R Stock : 0
LDO Regulator Pos 2V 1A 4-Pin(3+Tab) SC-73 T/R Stock : 0
LDO Regulator Pos 1.5V 1A 4-Pin(3+Tab) SC-73 T/R Stock : 0
LDO Regulator Pos 5V 1A 4-Pin(3+Tab) SC-73 T/R Stock : 0
LDO Voltage Regulators Undefined Undefined - IC REG LDO 1A 1.2V SOT-223 Stock : 0
MOSFET NX138AKS/SC-88/REEL 7" Q1/T1 * Stock : 5135
Transistor: N-MOSFET; unipolar; 60V; 0.12A; 0.265W; SOT23 Stock : 289029
MOSFET 150V100A Ultra Junction X4-Class Power MOSFET TO-220 Stock : 0
MOSFET 150V150A Ultra Junction X4-Class Power MOSFET TO-247 Stock : 0
MOSFET 150V150A Ultra Junction X4-Class Power MOSFET TO-263 Stock : 0
MOSFET 150V240A Ultra Junction X4-Class Power MOSFET TO-268HV Stock : 0
MOSFET PMZ600UNESOT883XQFN3 Stock : 18957
MOSFET 150V130A Ultra Junction X4-Class Power MOSFET TO-247 Stock : 0
MOSFET 150V150A Ultra Junction X4-Class Power MOSFET TO-263-7L Stock : 0
MOSFET 25V Vds 16V Vgs PowerPAK SO-8DC Stock : 6000
MOSFET 100V Vds 20V Vgs PowerPAK SO-8 Stock : 0
MOSFET MOSFET BVDSS: 61V~100V PowerDI5060-8 T&R 2.5K Stock : 2490
NX1029X 60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET Rev. 1 12 August 2011 Product data sheet 1. Product profile 1.1 General description Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible ESD protection up to 2 kV (N-channel) and 1 kV (P-channel) Very fast switching AEC-Q101 qualified Trench MOSFET technology 1.3 Applications Level shifter Load switch Power supply converter Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit TR2 (P-channel) V drain-source voltage T =25C - - -50 V DS j V gate-source voltage -20 - 20 V GS 1 I drain current V =-10 V T =25C - - -170 mA D GS amb TR1 (N-channel) V drain-source voltage T =25C - - 60 V DS j V gate-source voltage -20 - 20 V GS 1 I drain current V =10V T =25C - - 330 mA D GS amb TR1 (N-channel), Static characteristics R drain-source on-state V =10V I =500 mA -1 1.6 DSon GS D resistance pulsed t 300 s p 0.01 T =25C j TR2 (P-channel), Static characteristics R drain-source on-state V =-10 V I =-100mA -4.5 7.5 DSon GS D resistance T =25C j 2 1 Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm .NX1029X Nexperia 60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S1 source TR1 6 5 4 D1 D2 2 G1 gate TR1 3D2 drain TR2 G1 G2 4S2 source TR2 5 G2 gate TR2 12 3 6D1 drain TR1 SOT666 (SOT666) S1 S2 017aaa262 3. Ordering information Table 3. Ordering information Type number Package Name Description Version NX1029X SOT666 plastic surface-mounted package 6 leads SOT666 4. Marking Table 4. Marking codes 1 Type number Marking code NX1029X AD 1 % = placeholder for manufacturing site code. NX1029X All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 12 August 2011 2 of 20
