Product Information

NX138AKSX

NX138AKSX electronic component of Nexperia

Datasheet
MOSFET NX138AKS/SC-88/REEL 7" Q1/T1 *
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.0362 ea
Line Total: USD 108.6

197880 - Global Stock
Ships to you between
Wed. 22 May to Tue. 28 May
MOQ: 3000  Multiples: 3000
Pack Size: 3000

 More Buying Options & Price Grid(s)

Availability Price Quantity
4786 - WHS 1


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 1
Multiples : 1

Stock Image

NX138AKSX
Nexperia

1 : USD 0.0749
10 : USD 0.0637
100 : USD 0.0542
1000 : USD 0.0459
3000 : USD 0.0435
9000 : USD 0.0375
24000 : USD 0.0368
45000 : USD 0.0368
99000 : USD 0.0368

197880 - WHS 2


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 3000
Multiples : 3000

Stock Image

NX138AKSX
Nexperia

3000 : USD 0.0362
6000 : USD 0.0356
12000 : USD 0.035
18000 : USD 0.0344
24000 : USD 0.0338

2376 - WHS 3


Ships to you between
Wed. 29 May to Mon. 03 Jun

MOQ : 5
Multiples : 5

Stock Image

NX138AKSX
Nexperia

5 : USD 0.0825
50 : USD 0.0663
150 : USD 0.0582
500 : USD 0.0521
3000 : USD 0.0471
6000 : USD 0.0447

35119 - WHS 4


Ships to you between Tue. 28 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

NX138AKSX
Nexperia

1 : USD 0.3301
10 : USD 0.2243
100 : USD 0.0943
1000 : USD 0.0655
3000 : USD 0.0575
9000 : USD 0.0517
24000 : USD 0.0437
45000 : USD 0.0414
99000 : USD 0.0391

Read More Specifications

     
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Product Category
RoHS - XON
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Cnhts
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Additional Infomation About Product

NX138AKS 60 V, dual N-channel Trench MOSFET 15 June 2016 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection 3. Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor V drain-source voltage T = 25 C - - 60 V DS j V gate-source voltage -20 - 20 V GS I drain current V = 10 V T = 25 C 1 - - 170 mA D GS amb Static characteristics (per transistor) R drain-source on-state V = 10 V I = 170 mA T = 25 C - 3 4.5 DSon GS D j resistance 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad 2 for drain 1 cm .Nexperia NX138AKS 60 V, dual N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 6 5 4 D1 D2 1 S1 source TR1 2 G1 gate TR1 G1 3 D2 drain TR2 G2 1 2 3 4 S2 source TR2 TSSOP6 (SOT363) 5 G2 gate TR2 S1 S2 6 D1 drain TR1 017aaa256 6. Ordering information Table 3. Ordering information Type number Package Name Description Version NX138AKS TSSOP6 plastic surface-mounted package 6 leads SOT363 7. Marking Table 4. Marking codes Type number Marking code 1 NX138AKS F8% 1 % = placeholder for manufacturing site code NX138AKS All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 15 June 2016 2 / 16

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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