Product Information

NX3008CBKV

NX3008CBKV electronic component of Nexperia

Datasheet
MOSFET, N/P CH, 30/30V, 400/220MA,SOT666

Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.4054 ea
Line Total: USD 2.03

0 - Global Stock
MOQ: 5  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 5
Multiples : 1

Stock Image

NX3008CBKV
Nexperia

5 : USD 0.4054
100 : USD 0.2434
500 : USD 0.1668
1000 : USD 0.1281
2000 : USD 0.1152
4000 : USD 0.1058

     
Manufacturer
Product Category
Transistor Polarity
Brand
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No. Of Pins
Operating Temperature Max
Msl
Svhc
Operating Temperature Min
Operating Temperature Range
Pulse Current Idm
Voltage Vgs Th Max
LoadingGif

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NX3008CBKV 30 / 30 V, 400 / 220 mA N/P-channel Trench MOSFET Rev. 1 29 July 2011 Product data sheet 1. Product profile 1.1 General description Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Low threshold voltage ESD protection up to 2 kV Very fast switching AEC-Q101 qualified Trench MOSFET technology 1.3 Applications Level shifter Load switch Power supply converter Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit TR2 (P-channel) V drain-source voltage T =25C - - -30 V DS j V gate-source voltage -8 - 8 V GS 1 I drain current V =-4.5 V T =25C - - -220 mA D GS amb TR1 (N-channel) V drain-source voltage T =25C - - 30 V DS j V gate-source voltage -8 - 8 V GS 1 I drain current V =4.5 V T =25C - - 400 mA D GS amb TR1 (N-channel), Static characteristics R drain-source on-state V =4.5 V I = 350 mA -1 1.4 DSon GS D resistance T =25C j TR2 (P-channel), Static characteristics R drain-source on-state V =-4.5 V I =-200mA -2.8 4.1 DSon GS D resistance T =25C j 2 1 Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm . SOT666NX3008CBKV NXP Semiconductors 30 / 30 V, 400 / 220 mA N/P-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S1 source TR1 6 5 4 D1 D2 2 G1 gate TR1 3D2 drain TR2 G1 G2 4S2 source TR2 5 G2 gate TR2 12 3 6D1 drain TR1 SOT666 (SOT666) S1 S2 017aaa262 3. Ordering information Table 3. Ordering information Type number Package Name Description Version NX3008CBKV SOT666 plastic surface-mounted package 6 leads SOT666 4. Marking Table 4. Marking codes 1 Type number Marking code NX3008CBKV AC 1 % = placeholder for manufacturing site code. NX3008CBKV All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 1 29 July 2011 2 of 21

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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