Ships to you betweenTue. 28 May to Fri. 31 May
NX3008CBKV,115 Nexperia
Ships to you between Mon. 27 May to Wed. 29 May
NXP Semiconductors MOSFET N-Chan 30V 530mA Stock : 9100
MOSFET, N CH, 30V, 400MA, SOT23 Stock : 0
MOSFET 30V 400 MA N-CH TRENCH MOSFET Stock : 47520
MOSFET,NN CH, 30V, 350MA, SOT363 Stock : 0
NXP Semiconductors MOSFET 30V 350 MA DUAL N-CH TRENCH MOSFET Stock : 1152279
MOSFET, N-CH, 30V, 0.53A, SOT883B-3 Stock : 0
Transistor: N/P-MOSFET; unipolar; 30V; 0.4/0.22A; 1.09W; SOT666 Stock : 0
MOSFET NX3008NBKS/SC-88/REEL 7" Q3/T4 Stock : 10680
Transistor: N-MOSFET; unipolar; 30V; 0.4A; 350mW; SOT23 Stock : 1550
Transistor: N-MOSFET; unipolar; 30V; 0.35A; 280mW; SOT363 Stock : 9000
MOSFET 30V 350 MA N-CH TRENCH MOSFET Stock : 0
MOSFET 30V 400 MA DUAL N-CH TRENCH MOSFET Stock : 8000
NXP Semiconductors MOSFET 30V 220 MA DUAL P-CH TRENCH MOSFET Stock : 3820
MOSFET NX7002AKA/TO-236AB/REELLP// Stock : 62498
NXP Semiconductors MOSFET 60 V, single N-chan Trench MOSFET Stock : 45000
ROHM Semiconductor MOSFET TRANS MOSFET NCH 30V 5A 8PIN Stock : 22
MOSFET N-Ch 800V 2A TO220FP-3 CoolMOS C3 Stock : 0
MOSFET N-Ch 650V 4.5A TO220FP-3 CoolMOS C3 Stock : 0
MOSFET N-Ch 650V 6.2A TO220FP-3 CoolMOS C3 Stock : 0
NX3008CBKV 30 / 30 V, 400 / 220 mA N/P-channel Trench MOSFET Rev. 1 29 July 2011 Product data sheet 1. Product profile 1.1 General description Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Low threshold voltage ESD protection up to 2 kV Very fast switching AEC-Q101 qualified Trench MOSFET technology 1.3 Applications Level shifter Load switch Power supply converter Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit TR2 (P-channel) V drain-source voltage T =25C - - -30 V DS j V gate-source voltage -8 - 8 V GS 1 I drain current V =-4.5 V T =25C - - -220 mA D GS amb TR1 (N-channel) V drain-source voltage T =25C - - 30 V DS j V gate-source voltage -8 - 8 V GS 1 I drain current V =4.5 V T =25C - - 400 mA D GS amb TR1 (N-channel), Static characteristics R drain-source on-state V =4.5 V I = 350 mA -1 1.4 DSon GS D resistance T =25C j TR2 (P-channel), Static characteristics R drain-source on-state V =-4.5 V I =-200mA -2.8 4.1 DSon GS D resistance T =25C j 2 1 Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm .NX3008CBKV Nexperia 30 / 30 V, 400 / 220 mA N/P-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S1 source TR1 6 5 4 D1 D2 2 G1 gate TR1 3D2 drain TR2 G1 G2 4S2 source TR2 5 G2 gate TR2 12 3 6D1 drain TR1 SOT666 (SOT666) S1 S2 017aaa262 3. Ordering information Table 3. Ordering information Type number Package Name Description Version NX3008CBKV SOT666 plastic surface-mounted package 6 leads SOT666 4. Marking Table 4. Marking codes 1 Type number Marking code NX3008CBKV AC 1 % = placeholder for manufacturing site code. NX3008CBKV All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 29 July 2011 2 of 21
