Product Information

NX3008NBKW,115

NX3008NBKW,115 electronic component of Nexperia

Datasheet
N-Channel 30 V 350mA (Ta) 260mW (Ta), 830mW (Tc) Surface Mount SOT-323

Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.2504 ea
Line Total: USD 0.25

543355 - Global Stock
Ships to you between
Wed. 29 May to Fri. 31 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
37830 - WHS 1


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 27000
Multiples : 27000

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NX3008NBKW,115
Nexperia

27000 : USD 0.0367

6402 - WHS 2


Ships to you between
Thu. 30 May to Tue. 04 Jun

MOQ : 10
Multiples : 10

Stock Image

NX3008NBKW,115
Nexperia

10 : USD 0.0637
100 : USD 0.0512
300 : USD 0.045
3000 : USD 0.0402
6000 : USD 0.0365
9000 : USD 0.0347

543355 - WHS 3


Ships to you between Wed. 29 May to Fri. 31 May

MOQ : 1
Multiples : 1

Stock Image

NX3008NBKW,115
Nexperia

1 : USD 0.2504
10 : USD 0.1388
100 : USD 0.0688
1000 : USD 0.0499
3000 : USD 0.0404
9000 : USD 0.0356

101850 - WHS 4


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 3000
Multiples : 3000

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NX3008NBKW,115
Nexperia

3000 : USD 0.0381

25813 - WHS 5


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 214
Multiples : 1

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NX3008NBKW,115
Nexperia

214 : USD 0.0599
250 : USD 0.0469
500 : USD 0.0468
1000 : USD 0.0467
3000 : USD 0.0458

64020 - WHS 6


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 3000
Multiples : 3000

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NX3008NBKW,115
Nexperia

3000 : USD 0.04

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Gate Charge Qg
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Category
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NX3008NBKW 30 V, 350 mA N-channel Trench MOSFET Rev. 1 2 August 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching ESD protection up to 2 kV Low threshold voltage AEC-Q101 qualified Trench MOSFET technology 1.3 Applications Relay driver Low-side loadswitch High-speed line driver Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit drain-source voltage T =25C - - 30 V V DS j gate-source voltage -8 - 8 V V GS 1 drain current V =4.5 V T =25C -- 350mA I D GS amb Static characteristics drain-source on-state V =4.5 V I = 350 mA -1 1.4 R DSon GS D resistance T =25C j 2 1 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm .NX3008NBKW Nexperia 30 V, 350 mA N-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate 3 D 2S source 3 D drain G 12 SOT323 (SC-70) S 017aaa255 3. Ordering information Table 3. Ordering information Type number Package Name Description Version NX3008NBKW SC-70 plastic surface-mounted package 3 leads SOT323 4. Marking Table 4. Marking codes 1 Type number Marking code NX3008NBKW AA% 1 % = placeholder for manufacturing site code NX3008NBKW All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 2 August 2011 2 of 16

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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