A Product Line of Diodes Incorporated DMP4025LSD 40V DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits I max (A) Low R Minimizes conduction losses D DS(on) V R max (BR)DSS DS(on) T = +25 C A Fast switching speed Minimizes switching losses 25m V = -10V -7.6 GS Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) -40V 45m V = -4.5V -6.0 GS Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Description This MOSFET has been designed to minimize the on-state resistance Mechanical Data and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Case: SO-8 Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 (Note 1) Applications Moisture Sensitivity: Level 1 per J-STD-020 Motor Control Terminals: Finish - Matte Tin annealed over Copper lead frame. Backlighting Solderable per MIL-STD-202, Method 208 DC-DC Converters Weight: 0.074 grams (approximate) Printer Equipment SO-8 Top View Top View Device symbol Pin-Out Ordering Information (Notes 4 & 5) Part Number Compliance Case Packaging DMP4025LSD-13 Standard SO-8 2500 / Tape & Reel DMP4025LSDQ-13 Automotive SO-8 2500 / Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See A Product Line of Diodes Incorporated DMP4025LSD Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage -40 V DSS V Gate-Source Voltage V 20 GSS (Notes 7 & 9) -7.6 -6.1 T = +70C (Notes 7 & 9) A Continuous Drain Current V = -10V I GS D (Notes 6 & 9) -5.8 (Notes 6 & 10) -6.9 A Pulsed Drain Current (Notes 8 & 9) -28.0 V = -10V I GS DM Continuous Source Current (Body diode) (Notes 7 & 9) -3.0 I S Pulsed Source Current (Body diode) (Notes 8 & 9) -28.0 I SM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit 1.25 (Notes 6 & 9) 10 Power Dissipation 1.8 W Linear Derating Factor (Notes 6 & 10) P D 14.3 mW/C 2.14 (Notes 7 & 9) 17.2 (Notes 6 & 9) 100 Thermal Resistance, Junction to Ambient (Notes 6 & 10) 70 R JA C/W (Notes 7 & 9) 58 Thermal Resistance, Junction to Lead (Notes 9 & 11) R 51 JL Operating and Storage Temperature Range T T -55 to +150 C J, STG Notes: 6. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions the device is measured when operating in a steady-state condition. 7. Same as note (2), except the device is measured at t 10 sec. 8. Same as note (2), except the device is pulsed with D = 0.02 and pulse width 300s. 9. For a dual device with one active die. 10. For a device with two active die running at equal power. 11. Thermal resistance from junction to solder-point (at the end of the drain lead). 2 of 8 April 2013 DMP4025LSD Diodes Incorporated www.diodes.com Document Number: DS35937 Rev: 2 - 2 ADVANCE INFORMATION