Product Information

PBLS1501Y,115

PBLS1501Y,115 electronic component of Nexperia

Datasheet
Bipolar Transistors - Pre-Biased TRNS LDSWITCH TAPE-7

Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.0888 ea
Line Total: USD 266.4

0 - Global Stock
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 3000
Multiples : 3000

Stock Image

PBLS1501Y,115
Nexperia

3000 : USD 0.0888
9000 : USD 0.0823
15000 : USD 0.0823
30000 : USD 0.0823
60000 : USD 0.0823

0 - WHS 2


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 71
Multiples : 1

Stock Image

PBLS1501Y,115
Nexperia

71 : USD 0.4761

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Typical Resistor Ratio
Mounting Style
Package / Case
Collector- Emitter Voltage VCEO Max
Peak DC Collector Current
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Factory Pack Quantity :
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PBLS1501Y PBLS1501V 15 V PNP BISS loadswitch Rev. 02 24 August 2009 Product data sheet 1. Product prole 1.1 General description Low V PNP transistor and NPN resistor-equipped transistor in one package. CEsat Table 1. Product overview Type number Package NXP JEITA PBLS1501Y SOT363 SC-88 PBLS1501V SOT666 - 1.2 Features n Low V (BISS) transistor and resistor-equipped transistor in one package CEsat n Low threshold voltage (< 1 V) compared to MOSFET n Low drive power required n Space-saving solution n Reduction of component count 1.3 Applications n Supply line switches n Battery charger switches n High-side switches for LEDs, drivers and backlights n Portable equipment 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit TR1 PNP: low V transistor CEsat V collector-emitter voltage open base - - - 15 V CEO I collector-current (DC) - - - 500 mA C R equivalent on-resistance I =- 500 mA - 300 500 m CEsat C I =- 50 mA B TR2 NPN: resistor-equipped transistor V collector-emitter voltage open base - - 50 V CEOPBLS1501Y PBLS1501V NXP Semiconductors 15 V PNP BISS loadswitch Table 2. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit I output current (DC) - - 100 mA O R1 bias resistor 1 (input) 1.54 2.2 2.86 k R2/R1 bias resistor ratio 0.8 1 1.2 2. Pinning information Table 3. Discrete pinning Pin Description Simplied outline Symbol 1 emitter TR1 65 4 6 5 4 2 base TR1 3 output (collector) TR2 R1 R2 4 GND (emitter) TR2 TR2 5 input (base) TR2 TR1 1 2 3 6 collector TR1 001aab555 123 sym036 3. Ordering information Table 4. Ordering information Type number Package Name Description Version PBLS1501Y SC-88 plastic surface mounted package 6 leads SOT363 PBLS1501V - plastic surface mounted package 6 leads SOT666 4. Marking Table 5. Marking 1 Type number Marking code PBLS1501Y *C1 PBLS1501V C1 1 * = -: made in Hong Kong * = t: made in Malaysia * = W: made in China PBLS1501Y PBLS1501V 2 NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 24 August 2009 2 of 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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