Product Information

PBSS4330PAS

PBSS4330PAS electronic component of Nexperia

Datasheet
TRANSISTOR, BIPOLAR, AEC-Q101, NPN, 30V
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.4911 ea
Line Total: USD 2.46

0 - Global Stock
MOQ: 5  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 5
Multiples : 1

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PBSS4330PAS
Nexperia

5 : USD 0.4911
10 : USD 0.3483
100 : USD 0.3035
500 : USD 0.2589
1000 : USD 0.2124

Read More Specifications

     
Manufacturer
Product Category
Transistor Polarity
Brand
Collector Emitter Voltage Vbrceo
Transition Frequency Ft
Power Dissipation Pd
Dc Collector Current
Dc Current Gain Hfe
Transistor Case Style
No. Of Pins
Operating Temperature Max
Product Range
Automotive Qualification Standard
Msl
Svhc
LoadingGif

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Additional Infomation About Product

PBSS4330PAS 30 V, 3 A NPN low VCEsat (BISS) transistor 11 September 2014 Product data sheet 1. General description NPN low V Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra CEsat thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and soldarable side pads. PNP complement: PBSS5330PAS 2. Features and benefits Low collector-emitter saturation voltage V CEsat High collector current capability I and I C CM High collector current gain (h ) at high I FE C High efficiency due to less heat generation High temperature applications up to 175 C Reduced Printed-Circuit Board (PCB) area requirements Leadless small SMD plastic package with soldarable side pads Exposed heat sink for excellent thermal and electrical conductivity Suitable for Automatic Optical Inspection (AOI) of solder joint AEC-Q101 qualified 3. Applications Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans) 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter open base - - 30 V CEO voltage I collector current - - 3 A C I peak collector current single pulse t 1 ms - - 5 A CM p R collector-emitter I = 3 A I = 300 mA pulsed - 75 100 m CEsat C B saturation resistance t 300 s 0.02 T = 25 C p amb Scan or click this QR code to view the latest information for this product DFN2020D-3NXP Semiconductors PBSS4330PAS 30 V, 3 A NPN low VCEsat (BISS) transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 B base 3 3 2 E emitter 1 3 C collector 2 sym021 1 2 Transparent top view DFN2020D-3 (SOT1061D) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PBSS4330PAS DFN2020D-3 DFN2020D-3: plastic thermal enhanced ultra thin small outline SOT1061D package no leads 3 terminals body 2 x 2 x 0.65 mm 7. Marking Table 4. Marking codes Type number Marking code PBSS4330PAS E1 PBSS4330PAS All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 2014. All rights reserved Product data sheet 11 September 2014 2 / 18

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