X-On Electronics has gained recognition as a prominent supplier of PBSS4350SPN,115 bipolar transistors - bjt across the USA, India, Europe, Australia, and various other global locations. PBSS4350SPN,115 bipolar transistors - bjt are a product manufactured by Nexperia. We provide cost-effective solutions for bipolar transistors - bjt, ensuring timely deliveries around the world.

PBSS4350SPN,115

PBSS4350SPN,115 electronic component of Nexperia
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See Product Specifications
Part No.PBSS4350SPN,115
Manufacturer: Nexperia
Category:Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT TRANS BISS TAPE-7
Datasheet: PBSS4350SPN,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1000
Multiples : 1000
1000 : USD 0.1901
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1
1 : USD 1.333
10 : USD 0.6053
100 : USD 0.3323
500 : USD 0.2692
1000 : USD 0.2201
2000 : USD 0.1998
5000 : USD 0.1902
10000 : USD 0.1891
25000 : USD 0.1849
N/A

Obsolete
0 - WHS 3

MOQ : 38
Multiples : 1
38 : USD 0.9152
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Brand
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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PBSS4350SPN 50 V, 2.7 A NPN/PNP low V (BISS) transistor CEsat Rev. 01 5 April 2007 Product data sheet 1. Product prole 1.1 General description NPN/PNP double low V Breakthrough In Small Signal (BISS) transistor in a medium CEsat power Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package NPN/NPN PNP/PNP complement complement Nexperia Name PBSS4350SPN SOT96-1 SO8 PBSS4350SS PBSS5350SS 1.2 Features n Low collector-emitter saturation voltage V CEsat n High collector current capability I and I C CM n High collector current gain (h ) at high I FE C n High efciency due to less heat generation n Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications n Complementary MOSFET driver n Half and full bridge motor drivers n Dual low power switches (e.g. motors, fans) n Automotive 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit TR1 NPN low V transistor CEsat V collector-emitter voltage open base - - 50 V CEO I collector current - - 2.7 A C I peak collector current single pulse --5 A CM t 1ms p 1 R collector-emitter I =2A - 90 130 m CEsat C saturation resistance I = 200 mA BPBSS4350SPN Nexperia 50 V, 2.7 A NPN/PNP low V (BISS) transistor CEsat Table 2. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit TR2 PNP low V transistor CEsat V collector-emitter voltage open base - - 50- V CEO I collector current - - -2.7 A C I peak collector current single pulse -- -5A CM t 1ms p 1 R collector-emitter I = -2A - 95 140 m CEsat C saturation resistance I = -200 mA B 1 Pulse test: t 300 s 0.02. p 2. Pinning information Table 3. Pinning Pin Description Simplied outline Symbol 1 emitter TR1 8 5 8765 2 base TR1 3 emitter TR2 TR1 TR2 4 base TR2 5 collector TR2 1 4 1234 006aaa985 6 collector TR2 7 collector TR1 8 collector TR1 3. Ordering information Table 4. Ordering information Type number Package Name Description Version PBSS4350SPN SO8 plastic small outline package 8 leads body width SOT96-1 3.9 mm 4. Marking Table 5. Marking codes Type number Marking code PBSS4350SPN 4350SPN PBSS4350SPN 1 Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 01 5 April 2007 2 of 19

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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