X-On Electronics has gained recognition as a prominent supplier of PBSS4330PASX Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. PBSS4330PASX Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

PBSS4330PASX Nexperia

PBSS4330PASX electronic component of Nexperia
PBSS4330PASX Nexperia
PBSS4330PASX Bipolar Transistors - BJT
PBSS4330PASX  Semiconductors

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See Product Specifications
Part No. PBSS4330PASX
Manufacturer: Nexperia
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT 30V 3A NPN low VCEsat (BISS) trans
Datasheet: PBSS4330PASX Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1636: USD 0.159 ea
Line Total: USD 260.12 
Availability - 2638
Ship by Fri. 23 May to Thu. 29 May
MOQ: 1636  Multiples: 1
Pack Size: 1
Availability Price Quantity
2638
Ship by Fri. 23 May to Thu. 29 May
MOQ : 1636
Multiples : 1
1636 : USD 0.159

2817
Ship by Fri. 23 May to Thu. 29 May
MOQ : 1465
Multiples : 1
1465 : USD 0.1776
1489 : USD 0.1747

32
Ship by Fri. 30 May to Wed. 04 Jun
MOQ : 1
Multiples : 1
1 : USD 0.766
10 : USD 0.6058
30 : USD 0.538
100 : USD 0.3062
500 : USD 0.2807
1000 : USD 0.264

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Factory Pack Quantity :
Dc Current Gain Hfe Max
Continuous Collector Current
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PBSS4330PASX from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PBSS4330PASX and other electronic components in the Bipolar Transistors - BJT category and beyond.

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PBSS4330PAS 30 V, 3 A NPN low VCEsat (BISS) transistor 11 September 2014 Product data sheet 1. General description NPN low V Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra CEsat thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and soldarable side pads. PNP complement: PBSS5330PAS 2. Features and benefits Low collector-emitter saturation voltage V CEsat High collector current capability I and I C CM High collector current gain (h ) at high I FE C High efficiency due to less heat generation High temperature applications up to 175 C Reduced Printed-Circuit Board (PCB) area requirements Leadless small SMD plastic package with soldarable side pads Exposed heat sink for excellent thermal and electrical conductivity Suitable for Automatic Optical Inspection (AOI) of solder joint AEC-Q101 qualified 3. Applications Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans) 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter open base - - 30 V CEO voltage I collector current - - 3 A C I peak collector current single pulse t 1 ms - - 5 A CM p R collector-emitter I = 3 A I = 300 mA pulsed - 75 100 m CEsat C B saturation resistance t 300 s 0.02 T = 25 C p ambNexperia PBSS4330PAS 30 V, 3 A NPN low VCEsat (BISS) transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 B base 3 3 2 E emitter 1 3 C collector 2 sym021 1 2 Transparent top view DFN2020D-3 (SOT1061D) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PBSS4330PAS DFN2020D-3 DFN2020D-3: plastic thermal enhanced ultra thin small outline SOT1061D package no leads 3 terminals body 2 x 2 x 0.65 mm 7. Marking Table 4. Marking codes Type number Marking code PBSS4330PAS E1 PBSS4330PAS All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 11 September 2014 2 / 18

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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