Product Information

PHC21025,118

PHC21025,118 electronic component of Nexperia

Datasheet
NXP Semiconductors MOSFET TAPE-7 MOSFET

Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1

Stock Image

PHC21025,118
Nexperia

1 : USD 0.4109
N/A

Obsolete
0 - WHS 2

MOQ : 2500
Multiples : 2500

Stock Image

PHC21025,118
Nexperia

2500 : USD 0.4145
N/A

Obsolete
0 - WHS 3

MOQ : 1
Multiples : 1

Stock Image

PHC21025,118
Nexperia

1 : USD 0.9295
10 : USD 0.7722
100 : USD 0.4955
1000 : USD 0.4166
2500 : USD 0.383
10000 : USD 0.383
25000 : USD 0.3681
50000 : USD 0.3619
100000 : USD 0.3531
N/A

Obsolete
0 - WHS 4

MOQ : 107
Multiples : 1

Stock Image

PHC21025,118
Nexperia

107 : USD 0.4933
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Brand
Factory Pack Quantity :
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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PHC21025 Complementary intermediate level FET Rev. 04 17 March 2011 Product data sheet 1. Product profile 1.1 General description Intermediate level N-channel and P-channel complementary pair enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits Low conduction losses due to low Suitable for high frequency on-state resistance applications due to fast switching characteristics 1.3 Applications Motor and actuator drivers Synchronized rectification Power management 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 150 C --30 V DS j j N-channel T 25 C T 150 C ---30 V j j P-channel drain current T 80 C P-channel - - -2.3 A I D sp 80 C N-channel - - 3.5 A T sp 1 total power dissipation T =25C --1 W P tot amb Static characteristics drain-source on-state V =-10 V I =-1A - 0.22 0.25 R DSon GS D resistance T = 25 C P-channel j see Figure 16 see Figure 19 V =10V I =2.2 A - 0.08 0.1 GS D T = 25 C N-channel j see Figure 15 see Figure 18PHC21025 Nexperia Complementary intermediate level FET Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit Dynamic characteristics Q gate-drain charge V =-10 V I =-2.3A -3 -nC GD GS D V =-15 V T =25C DS j P-channel see Figure 12 V =10V I =2.3 A -2.5 -nC GS D V =15V T =25C DS j N-channel see Figure 11 1 Maximum permissible dissipation per MOS transistor. Device mounted on printed-circuit board with a thermal resistance from ambient to solder point of 90 K/W. 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S1 source1 8 5 D1 D1 D2 D2 2 G1 gate1 3S2 source2 4 G2 gate2 5D2 drain2 1 4 S1 G1 S2 G2 sym114 6D2 drain2 SOT96-1 (SO8) 7D1 drain1 8D1 drain1 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PHC21025 SO8 plastic small outline package 8 leads body width 3.9 mm SOT96-1 PHC21025 All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 04 17 March 2011 2 of 16

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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