PHB47NQ10T,118 Nexperia

PHB47NQ10T N-channel TrenchMOS standard level FET Rev. 02 25 February 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits Low conduction losses due to low Suitable for high frequency on-state resistance applications due to fast switching characteristics 1.3 Applications DC-to-DC convertors Switched-mode power supplies 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 100 V DS j j I drain current T =25C V =10V --47 A D mb GS see Figure 1 and 2 P total power T = 25 C see Figure 3 - - 166 W tot mb dissipation Dynamic characteristics Q gate-drain charge V =10V I =40A -21 - nC GD GS D V =80V T =25C DS j see Figure 13 Static characteristics R drain-source V =10V I =25A - 2028m DSon GS D on-state resistance T =25C j see Figure 11 and 12PHB47NQ10T NXP Semiconductors N-channel TrenchMOS standard level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1G gate mb D 1 2D drain 3S source G mb D mounting base connected to drain mbb076 S 2 13 SOT404 (D2PAK) 1 It is not possible to make a connection to pin 2. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PHB47NQ10T D2PAK plastic single-ended surface-mounted package (D2PAK) 3 leads (one SOT404 lead cropped) PHB47NQ10T 2 All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 25 February 2010 2 of 13