PHP79NQ08LT,127 Nexperia

PHP79NQ08LT,127 electronic component of Nexperia
PHP79NQ08LT,127 Nexperia
PHP79NQ08LT,127 MOSFETs
PHP79NQ08LT,127  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of PHP79NQ08LT,127 MOSFETs across the USA, India, Europe, Australia, and various other global locations. PHP79NQ08LT,127 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. PHP79NQ08LT,127
Manufacturer: Nexperia
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 75V; 47A; Idm: 240A; 157W; TO220AB
Datasheet: PHP79NQ08LT,127 Datasheet (PDF)
Price (USD)
N/A

Obsolete

Availability 0
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 2.5
10$ 2.1492
100$ 1.7274
500$ 1.4192
1000$ 1.176
2000$ 1.0948
5000$ 1.0543
10000$ 1.0137
N/A

Obsolete

Availability 0
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 3.8272
10$ 2.3915
100$ 1.6544
500$ 1.3072
N/A

Obsolete

Availability 0
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 2.475
10$ 1.749
100$ 1.287
500$ 1.0846
1000$ 1.0054
5000$ 0.9922
N/A

Obsolete

Availability 0
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 2.2118
3$ 1.9811
10$ 1.764
11$ 1.4519
30$ 1.3705
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Gate Charge Qg
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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We are delighted to provide the PHP79NQ08LT,127 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PHP79NQ08LT,127 and other electronic components in the MOSFETs category and beyond.

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Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of PHP79NQ08LT N-channel TrenchMOS logic level FET Rev. 03 26 April 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits Low conduction losses due to low Suitable for logic level gate drive on-state resistance sources 1.3 Applications DC-to-DC convertors Motors, lamps and solenoids General purpose power switching Uninterruptible power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source T 25 C T 175C --75 V DS j j voltage I drain current T =25C V=10V --73 A D mb GS P total power T = 25 C see Figure 2 --157W tot mb dissipation Static characteristics R drain-source V =10V I =25A - 1416m DSon GS D on-state T =25C see Figure 9 j resistance see Figure 10 Dynamic characteristics Q gate-drain charge V =5V I =25A -14 - nC GD GS D V =60 V T =25C DS j see Figure 11 see Figure 12

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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