PHPT61002PYC Nexperia

PHPT61002PYC 100 V, 2 A PNP high power bipolar transistor 10 January 2014 Product data sheet 1. General description PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61002NYC. 2. Features and benefits High thermal power dissipation capability Suitable for high temperature applications up to 175 C Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK High energy efficiency due to less heat generation 3. Applications Power management Load switch Linear mode voltage regulator Backlighting applications 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter open base - - -100 V CEO voltage I collector current - - -2 A C I peak collector current t 1 ms pulsed - - -6 A CM p R collector-emitter I = -2 A I = -200 mA pulsed - 125 200 m CEsat C B saturation resistance t 300 s 0.02 T = 25 C p amb Scan or click this QR code to view the latest information for this product LFPAK56NXP Semiconductors PHPT61002PYC 100 V, 2 A PNP high power bipolar transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 E emitter mb C 2 E emitter B 3 E emitter E sym132 4 B base 1 2 3 4 mb C collector LFPAK56 Power- SO8 (SOT669) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PHPT61002PYC LFPAK56 Plastic single-ended surface-mounted package (LFPAK56 SOT669 Power-SO8 Power-SO8) 4 leads 7. Marking Table 4. Marking codes Type number Marking code PHPT61002PYC 1002PCA PHPT61002PYC All information provided in this document is subject to legal disclaimers. NXP N.V. 2014. All rights reserved Product data sheet 10 January 2014 2 / 15