PHPT610035NKX Nexperia

PHPT610035NK NPN/NPN high power double bipolar transistor 10 September 2020 Product data sheet 1. General description NPN/NPN high power double bipolar transistor in a SOT1205 (LFPAK56D) Surface-Mounted Device (SMD) power plastic package. Matched version of PHPT610030NK. PNP/PNP complement: PHPT610035PK NPN/PNP complement: PHPT610035NPK 2. Features and benefits Current gain matching 5% High thermal power dissipation capability Suitable for high temperature applications up to 175 C Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK High energy efficiency due to less heat generation AEC-Q101 qualified 3. Applications Current mirror Motor control Power management Backlighting applications Relay replacement differential amplifiers 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor V collector-base voltage open emitter - - 100 V CBO I collector current - - 3 A C R collector-emitter I = 3 A I = 300 mA t 300 s - 75 110 m CEsat C B p saturation resistance pulsed 0.02 T = 25 C ambNexperia PHPT610035NK NPN/NPN high power double bipolar transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 E1 emitter TR1 8 7 6 5 C1 B2 E2 2 B1 base TR1 TR2 3 E2 emitter TR2 TR1 4 B2 base TR2 5 C2 collector TR2 E1 B1 C2 6 C2 collector TR2 sym140 7 C1 collector TR1 1 2 3 4 8 C1 collector TR1 LFPAK56D Dual LFPAK (SOT1205) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PHPT610035NK LFPAK56D plastic, single ended surface mounted package (LFPAK56D) 8 SOT1205 Dual LFPAK leads 7. Marking Table 4. Marking codes Type number Marking code PHPT610035NK 10035NK PHPT610035NK All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2020. All rights reserved Product data sheet 10 September 2020 2 / 14