PHT6NQ10T,135 Nexperia

PHT6NQ10T,135 electronic component of Nexperia
PHT6NQ10T,135 Nexperia
PHT6NQ10T,135 MOSFETs
PHT6NQ10T,135  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of PHT6NQ10T,135 MOSFETs across the USA, India, Europe, Australia, and various other global locations. PHT6NQ10T,135 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. PHT6NQ10T,135
Manufacturer: Nexperia
Category: MOSFETs
Description: N-Channel 100 V 3A (Ta) 1.8W (Ta), 8.3W (Tc) Surface Mount SOT-223
Datasheet: PHT6NQ10T,135 Datasheet (PDF)
Price (USD)
1: USD 0.7263 ea
Line Total: USD 0.73 
Availability : 49909
  
Ship by Wed. 20 Aug to Fri. 22 Aug
QtyUnit Price
1$ 0.7263
10$ 0.6212
100$ 0.4015
500$ 0.3751
1000$ 0.3619
2000$ 0.3597
4000$ 0.3421
8000$ 0.3421
24000$ 0.341

Availability 49909
Ship by Wed. 20 Aug to Fri. 22 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.7263
10$ 0.6212
100$ 0.4015
500$ 0.3751
1000$ 0.3619
2000$ 0.3597
4000$ 0.3421
8000$ 0.3421
24000$ 0.341


Availability 1064
Ship by Fri. 22 Aug to Thu. 28 Aug
MOQ : 300
Multiples : 1
QtyUnit Price
300$ 0.8684
350$ 0.7449
500$ 0.6331


Availability 3880
Ship by Fri. 22 Aug to Thu. 28 Aug
MOQ : 4000
Multiples : 4000
QtyUnit Price
4000$ 0.4094


Availability 28078
Ship by Fri. 22 Aug to Thu. 28 Aug
MOQ : 700
Multiples : 1
QtyUnit Price
700$ 0.5572
1000$ 0.4941
10000$ 0.4405
100000$ 0.3691

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
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Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PHT6NQ10T,135 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PHT6NQ10T,135 and other electronic components in the MOSFETs category and beyond.

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Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of Philips Semiconductors Product specification N-channel TrenchMOS transistor PHT6NQ10T FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance V = 100 V DSS Fast switching Low thermal resistance I = 6.5 A D g R 90 m DS(ON) s GENERAL DESCRIPTION PINNING SOT223 N-channel enhancement mode PIN DESCRIPTION 4 field-effect transistor in a plastic envelope using trench 1 gate technology. 2 drain Applications:- Motor and relay drivers 3 source d.c. to d.c. converters 4 drain (tab) 1 23 The PHT6NQ10T is supplied in the SOT223 surface mounting package. LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V Drain-source voltage T = 25 C to 150C - 100 V DSS j V Drain-gate voltage T = 25 C to 150C R = 20 k - 100 V DGR j GS V Gate-source voltage - 20 V GS I Continuous drain current (dc) T = 25 C - 6.5 A D sp T = 25 C - 3 A amb I Continuous drain current (dc) T = 100 C - 4.1 A D sp T = 100 C - 1.9 A amb I Pulsed drain current - 26 A DM P Total power dissipation T = 25 C - 8.3 W D sp T = 25 C - 1.8 W amb T, T Operating junction and - 65 150 C j stg storage temperature THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT R Thermal resistance junction to surface mounted, FR4 12 15 K/W th j-sp solder point board R Thermal resistance junction to surface mounted, FR4 70 - K/W th j-amb ambient board August 1999 1 Rev 1.000

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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