Product Information

PMCM4401VNEAZ

PMCM4401VNEAZ electronic component of Nexperia

Datasheet
Trans MOSFET N-CH 12V 4.7A 4-Pin WLCSP

Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.4287 ea
Line Total: USD 0.43

8760 - Global Stock
Ships to you between
Thu. 16 May to Mon. 20 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
7755 - WHS 1


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 1
Multiples : 1

Stock Image

PMCM4401VNEAZ
Nexperia

1 : USD 0.2133
10 : USD 0.2111
25 : USD 0.209
100 : USD 0.1307
250 : USD 0.1293
500 : USD 0.1263
1000 : USD 0.1238
3000 : USD 0.1238
6000 : USD 0.1238

8730 - WHS 2


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 9000
Multiples : 9000

Stock Image

PMCM4401VNEAZ
Nexperia

9000 : USD 0.1129
18000 : USD 0.1129
45000 : USD 0.1129

8760 - WHS 3


Ships to you between Thu. 16 May to Mon. 20 May

MOQ : 1
Multiples : 1

Stock Image

PMCM4401VNEAZ
Nexperia

1 : USD 0.4287
10 : USD 0.3381
100 : USD 0.1896
1000 : USD 0.1256
2500 : USD 0.1244
9000 : USD 0.1159
18000 : USD 0.1159
45000 : USD 0.1123

     
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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PMCM4401VNE 12V, N-channel Trench MOSFET 24 July 2015 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Ultra small package: 0.78 0.78 0.35 mm Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM 3. Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - 12 V DS j V gate-source voltage -8 - 8 V GS I drain current V = 4.5 V T = 25 C t 5 s 1 - - 6 A D GS amb Static characteristics R drain-source on-state V = 4.5 V I = 3 A T = 25 C - 36 42 m DSon GS D j resistance 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 6 cm .Nexperia PMCM4401VNE 12V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 2 D A1 G gate A2 S source A B1 D drain G B2 S source B S Transparent top view 017aaa255 WLCSP4 (OL- PMCM4401VNE) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMCM4401VNE WLCSP4 WLCSP4: wafer level chip-size package 4 bumps OL-PMCM4401VNE (2 x 2) 7. Marking Table 4. Marking codes Type number Marking code PMCM4401VNE P 2 PIN A1 INDICATION MARKING CODE 1 (EXAMPLE) A B Top view, balls down aaa-012880 Fig. 1. WLCSP4 marking code description PMCM4401VNE All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 24 July 2015 2 / 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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