Product Information

PMCM6501VPE

PMCM6501VPE electronic component of NXP

Datasheet
MOSFET, P-CH, -12V, -6.2A, WLCSP-6
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.3881 ea
Line Total: USD 0.39

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 1
Multiples : 1
1 : USD 0.3881
10 : USD 0.3648
100 : USD 0.303
250 : USD 0.274
500 : USD 0.2388
1000 : USD 0.2262

Read More Specifications

     
Manufacturer
Product Category
Transistor Polarity
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rds On
Rds On Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No Of Pins
Operating Temperature Max
Product Range
Msl
Svhc
LoadingGif

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Additional Infomation About Product

PMCM6501VPE 12 V, P-channel Trench MOSFET 10 August 2015 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Ultra small package: 0.98 1.48 0.35 mm Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM 3. Applications Battery switch High-speed line driver Low-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - -12 V DS j V gate-source voltage -8 - 8 V GS I drain current V = -4.5 V T = 25 C t 5 s 1 - - -8.2 A D GS amb Static characteristics R drain-source on-state V = -4.5 V I = -3.0 A T = 25 C - 19 25 m DSon GS D j resistance 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 6 cm . Scan or click this QR code to view the latest information for this product WLCSP6NXP Semiconductors PMCM6501VPE 12 V, P-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 2 D A1 G gate A2 S source A B1 S source G B B2 S source C C1 D drain S Transparent top view C2 D drain 017aaa259 WLCSP6 (OL- PMCM6501VPE) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMCM6501VPE WLCSP6 WLCSP6: wafer level chip-size package 6 bumps OL-PMCM6501VPE (3 x 2) 7. Marking Table 4. Marking codes Type number Marking code PMCM6501VPE AD 2 PIN A1 INDICATION MARKING CODE 1 (EXAMPLE) A B C Top view, balls down aaa-013901 Fig. 1. WLCSP6 marking code description PMCM6501VPE All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 2015. All rights reserved Product data sheet 10 August 2015 2 / 15

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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