PMCM440VNE

PMCM440VNE 12 V, N-channel Trench MOSFET 7 April 2015 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Ultra small package: 0.78 0.78 0.35 mm Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM 3. Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - 12 V DS j V gate-source voltage -8 - 8 V GS I drain current V = 4.5 V T = 25 C t 5 s 1 - - 5 A D GS amb Static characteristics R drain-source on-state V = 4.5 V I = 3 A T = 25 C - 57 67 m DSon GS D j resistance 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 6 cm . Scan or click this QR code to view the latest information for this product WLCSP4NXP Semiconductors PMCM440VNE 12 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 2 D A1 G gate A2 S source A B1 D drain G B2 S source B S Transparent top view 017aaa255 WLCSP4 (OL- PMCM440VNE) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMCM440VNE WLCSP4 WLCSP4: wafer level chip-size package 4 bumps (2 x 2) OL- PMCM440VNE 7. Marking Table 4. Marking codes Type number Marking code PMCM440VNE M 2 PIN A1 INDICATION MARKING CODE 1 (EXAMPLE) A B aaa-012880 Fig. 1. WLCSP4 marking code description PMCM440VNE All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 2015. All rights reserved Product data sheet 7 April 2015 2 / 15