PMEG3010AESAYL Nexperia

PMEG3010AESA 30 V, 1 A low VF MEGA Schottky barrier rectifier 19 February 2020 Product data sheet 1. General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection in a leadless ultra small DSN1006U-2 (SOD995) Surface-Mounted Device (SMD) package. 2. Features and benefits Average forward current: I 1 A F(AV) Reverse voltage: V 30 V R Low forward voltage, typical: V = 415 mV F Low reverse current, typical: I = 300 A R Package height typ. 270 m 3. Applications Low voltage rectification High efficiency DC-to-DC conversion Switch mode power supply Low power consumption applications Ultra high-speed switching LED backlight for mobile application 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit I average forward = 0.5 square wave f = 20 kHz T - - 1 A F(AV) sp current 145 C V reverse voltage T = 25 C - - 30 V R j V forward voltage I = 1 A t 300 s 0.02 - 415 480 mV F F p T = 25 C j I reverse current V = 20 V t 3 ms 0.3 - 60 255 A R R p T = 25 C j V = 30 V t 3 ms 0.3 - 300 1250 A R p T = 25 C jNexperia PMEG3010AESA 30 V, 1 A low VF MEGA Schottky barrier rectifier 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 K cathode 1 K A 2 A anode sym001 1 2 Transparent top view DSN1006U-2 (SOD995) 1 The marking bar indicates the cathode. 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMEG3010AESA DSN1006U-2 silicon, leadless ultra small package 2 terminals 0.325 mm SOD995 pitch 1 mm x 0.6 mm x 0.27 mm body 7. Marking Table 4. Marking codes Type number Marking code PMEG3010AESA 3B PMEG3010AESA All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2020. All rights reserved Product data sheet 19 February 2020 2 / 12