PMEG3010EB,115 Nexperia

PMEG3010EB 1 A very low VF MEGA Schottky barrier rectifier 7 April 2021 Product data sheet 1. General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD523 (SC-79) ultra small and flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits Forward current: I 1 A F Reverse voltage: V 30 V R Very low forward voltage Ultra small and flat lead SMD plastic package AEC-Q101 qualified 3. Applications Low voltage rectification High efficiency DC-to-DC conversion Switch mode power supply Reverse polarity protection Low power consumption applications 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit I forward current T 55 C - - 1 A F sp V reverse voltage - - 30 V R V forward voltage I = 1 A t 300 s 0.02 pulsed - 610 680 mV F F p T = 25 C amb 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 K cathode 1 K A 2 A anode sym001 1 2 SC-79 (SOD523) 1 The marking bar indicates the cathode.Nexperia PMEG3010EB 1 A very low VF MEGA Schottky barrier rectifier 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMEG3010EB SC-79 plastic, surface-mounted package 2 leads 1.2 mm x 0.8 SOD523 mm x 0.6 mm body 7. Marking Table 4. Marking codes Type number Marking code KA PMEG3010EB 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V reverse voltage - 30 V R I forward current T 55 C - 1 A F sp I repetitive peak forward t 1 ms 0.25 - 3 A FRM p current I non-repetitive peak t = 8 ms square wave T = 25 C - 5 A FSM p j(init) forward current P total power dissipation T 25 C 1 - 310 mW tot amb T junction temperature - 150 C j T ambient temperature -65 150 C amb T storage temperature -65 150 C stg 1 Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit R thermal resistance from in free air 1 2 - - 400 K/W th(j-a) junction to ambient R thermal resistance from 3 - - 75 K/W th(j-sp) junction to solder point 1 For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses P are a R significant part of the total power losses. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 3 Soldering point of cathode tab. PMEG3010EB All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2021. All rights reserved Product data sheet 7 April 2021 2 / 8