Product Information

PMEG6010ER.115

PMEG6010ER.115 electronic component of Nexperia

Datasheet
Diode: Schottky rectifying; SMD; 60V; 1A; SOD123W; Ufmax:530mV

Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.2763 ea
Line Total: USD 1.38

7585 - Global Stock
Ships to you between
Thu. 23 May to Wed. 29 May
MOQ: 5  Multiples: 1
Pack Size: 1
Availability Price Quantity
7391 - WHS 1


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 5
Multiples : 1

Stock Image

PMEG6010ER.115
Nexperia

5 : USD 0.2678
25 : USD 0.1404
100 : USD 0.1261
164 : USD 0.1001
450 : USD 0.0949

     
Manufacturer
Product Category
Case
Mounting
Kind Of Package
Semiconductor Structure
Type Of Diode
Max Forward Impulse Current
Max Forward Voltage
Max Off-State Voltage
Load Current
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PMEG6010ER.115 is a P-channel enhancement mode MOSFET transistor, manufactured by Nexperia. It features a zero ohm collector-emitter resistance and a low 110 mOhm maximum drain to source resistance. This device is ideal for circuit design applications, as it provides low losses for remote switching in motor control, as well as for low RDS(on) during high frequency switching in high power applications. This device also has a very low output capacitance, making it ideal for high frequency applications. Additional features include a low on-resistance chip construction and an integrated fast body diode for speed and efficiency.

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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