PMGD780SN,115 Nexperia

PMGD780SN,115 electronic component of Nexperia
PMGD780SN,115 Nexperia
PMGD780SN,115 MOSFETs
PMGD780SN,115  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of PMGD780SN,115 MOSFETs across the USA, India, Europe, Australia, and various other global locations. PMGD780SN,115 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. PMGD780SN,115
Manufacturer: Nexperia
Category: MOSFETs
Description: Mosfet Array 2 N-Channel (Dual) 60V 490mA 410mW Surface Mount 6-TSSOP
Datasheet: PMGD780SN,115 Datasheet (PDF)
Price (USD)
1: USD 0.4125 ea
Line Total: USD 0.41 
Availability : 4789
  
Ship by Thu. 14 Aug to Mon. 18 Aug
QtyUnit Price
1$ 0.4125
10$ 0.2163
100$ 0.126
500$ 0.1078
1000$ 0.0924
3000$ 0.0726
6000$ 0.0704
9000$ 0.0649
24000$ 0.0649

Availability 107670
Ship by Mon. 18 Aug to Fri. 22 Aug
MOQ : 6000
Multiples : 3000
QtyUnit Price
6000$ 0.0763
9000$ 0.0715
12000$ 0.071
30000$ 0.0695
45000$ 0.068


Availability 4789
Ship by Thu. 14 Aug to Mon. 18 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.4125
10$ 0.2163
100$ 0.126
500$ 0.1078
1000$ 0.0924
3000$ 0.0726
6000$ 0.0704
9000$ 0.0649
24000$ 0.0649


Availability 229890
Ship by Mon. 18 Aug to Fri. 22 Aug
MOQ : 4011
Multiples : 1
QtyUnit Price
4011$ 0.0972
10000$ 0.0835
100000$ 0.0699


Availability 52380
Ship by Mon. 18 Aug to Fri. 22 Aug
MOQ : 6000
Multiples : 3000
QtyUnit Price
6000$ 0.0776


Availability 1610
Ship by Mon. 25 Aug to Thu. 28 Aug
MOQ : 5
Multiples : 5
QtyUnit Price
5$ 0.2412
50$ 0.1908
150$ 0.1242
500$ 0.0991
3000$ 0.0888
6000$ 0.0839


Availability 10902
Ship by Mon. 18 Aug to Fri. 22 Aug
MOQ : 2206
Multiples : 1
QtyUnit Price
2206$ 0.1179
2281$ 0.114
2500$ 0.1106
5000$ 0.1035
10000$ 0.101


Availability 58200
Ship by Mon. 18 Aug to Fri. 22 Aug
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.1291
24000$ 0.1135
36000$ 0.1055
48000$ 0.0995

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
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Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Brand
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Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
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Length
Transistor Type
Width
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Hts Code
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PMGD780SN,115 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PMGD780SN,115 and other electronic components in the MOSFETs category and beyond.

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Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of PMGD780SN Dual N-channel TrenchMOS standard level FET Rev. 02 19 April 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode field-effect transistor in a small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using TrenchMOS technology. 1.2 Features and benefits Surface-mounted package Footprint 40 % smaller than SOT23 Standard level threshold voltage Fast switching Low on-state resistance Dual device 1.3 Applications Driver circuits Switching in portable appliances 1.4 Quick reference data V 60 V I 0.49 A DS D P 0.41 W R 920 m tot DSon 2. Pinning information Table 1. Pinning - SOT363 (SC-88), simplified outline and symbol Pin Description Simplified outline Graphic symbol 1 source1 (S1) 6 5 4 D D 1 2 2 gate1 (G1) 3 drain2 (D2) 4 source2 (S2) 132 5 gate2 (G2) SOT363 (SC-88) 6 drain1 (D1) S G S G 1 1 2 2 msd901

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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