Product Information

PMH1200UPEH

PMH1200UPEH electronic component of Nexperia

Datasheet
MOSFET 30 V P-channel Trench MOSFET

Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.3875 ea
Line Total: USD 0.39

19400 - Global Stock
Ships to you between
Mon. 27 May to Wed. 29 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
15004 - WHS 1


Ships to you between Mon. 27 May to Wed. 29 May

MOQ : 1
Multiples : 1

Stock Image

PMH1200UPEH
Nexperia

1 : USD 0.3301
10 : USD 0.1794
100 : USD 0.0908
1000 : USD 0.0725
2500 : USD 0.0598
10000 : USD 0.0529
20000 : USD 0.0506
50000 : USD 0.0471
100000 : USD 0.046

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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PMH1200UPE 30 V, P-channel Trench MOSFET 4 March 2019 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM Leadless ultra small and ultra thin SMD plastic package: 0.62 x 0.62 x 0.37 mm 3. Applications Relay driver High-speed line driver Low-side load switch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - -30 V DS j V gate-source voltage -10 - 10 V GS I drain current V = -4.5 V T = 25 C 1 - - -520 mA D GS amb Static characteristics R drain-source on-state V = -4.5 V I = -410 mA T = 25 C - 1.3 1.6 DSon GS D j resistance 2 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 1 cm .Nexperia PMH1200UPE 30 V, P-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate D 2 1 2 S source 3 D drain G 3 Transparent top view S DFN0606-3 (SOT8001) 017aaa259 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMH1200UPE DFN0606-3 plastic, leadless ultra small package 3 terminals body 0.62 x SOT8001 0.62 x 0.37 mm 7. Marking Table 4. Marking codes Type number Marking code PMH1200UPE 0001 0101 reading direction pin 1 indication marking code reading example: (example) 1011 1101 reading direction aaa-029459 Fig. 1. DFN0606-3 (SOT8001) binary marking code description PMH1200UPE All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2019. All rights reserved Product data sheet 4 March 2019 2 / 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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