Product Information

PMFPB8032XP,115

PMFPB8032XP,115 electronic component of Nexperia

Datasheet
NXP Semiconductors MOSFET Broad small-signal MOSFET Portfolio
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
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Availability Price Quantity
0 - WHS 1

MOQ : 3000
Multiples : 3000
3000 : USD 0.1809
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1
1 : USD 0.7249
10 : USD 0.6152
100 : USD 0.4717
500 : USD 0.3728
1000 : USD 0.2983
N/A

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0 - WHS 3

MOQ : 3000
Multiples : 3000
3000 : USD 0.116
6000 : USD 0.1114
9000 : USD 0.1114
12000 : USD 0.1114
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0 - WHS 4

MOQ : 3000
Multiples : 3000
3000 : USD 0.1586
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0 - WHS 5

MOQ : 1
Multiples : 1
1 : USD 1.2427
10 : USD 0.5226
100 : USD 0.2569
500 : USD 0.2133
1000 : USD 0.1636
3000 : USD 0.1574
6000 : USD 0.1533
9000 : USD 0.1201
24000 : USD 0.1171
N/A

Obsolete
0 - WHS 6

MOQ : 51
Multiples : 1
51 : USD 0.0957
100 : USD 0.0946
250 : USD 0.0927
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Obsolete
0 - WHS 7

MOQ : 3000
Multiples : 3000
3000 : USD 0.2013
N/A

Obsolete
0 - WHS 8

MOQ : 3000
Multiples : 3000
3000 : USD 0.1641
N/A

Obsolete

Read More Specifications

     
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Qg - Gate Charge
Channel Mode
Configuration
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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Additional Infomation About Product

PMFPB8032XP 20 V, 3.7 A / 320 mV VF P-channel MOSFET-Schottky combination 21 December 2012 Product data sheet 1. General description Small-signal P-channel enhancement mode Field-Effect Transistor (FET) using Trench MOSFET technology and ultra low V Maximum Efficiency General Application (MEGA) F Schottky diode combined in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits 1.8 V R rated for low-voltage gate drive DSon Small and leadless ultra thin SMD plastic package: 2 2 0.65 mm Exposed drain pad for excellent thermal conduction Integrated ultra low V MEGA Schottky diode F 3. Applications Charging switch for portable devices DC-to-DC converters Power management in battery-driven portables Hard disk and computing power management 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit MOSFET transistor V drain-source voltage T = 25 C - - -20 V DS j V gate-source voltage -12 - 12 V GS I drain current V = -4.5 V T = 25 C t 5 s 1 - - -3.7 A D GS amb Schottky diode I forward current T 105 C - - 2 A F sp V reverse voltage T = 25 C - - 20 V R amb MOSFET transistor static characteristics R drain-source on-state V = -4.5 V I = -2.7 A T = 25 C - 80 102 m DSon GS D j resistanceNexperia PMFPB8032XP 20 V, 3.7 A / 320 mV VF P-channel MOSFET-Schottky combination Symbol Parameter Conditions Min Typ Max Unit Schottky diode V forward voltage I = 1 A T = 25 C - 320 365 mV F F j 2 1 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm . 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol A G S 1 A anode 6 5 4 2 n.c. not connected 7 8 3 D drain 4 S source 1 2 3 5 G gate Transparent top view K D 6 K cathode DFN2020-6 (SOT1118) aaa-003667 7 K cathode 8 D drain 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMFPB8032XP DFN2020-6 plastic thermal enhanced ultra thin small outline package no SOT1118 leads 6 terminals body 2 x 2 x 0.65 mm 7. Marking Table 4. Marking codes Type number Marking code PMFPB8032XP 1X 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit MOSFET transistor V drain-source voltage T = 25 C - -20 V DS j PMFPB8032XP All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 21 December 2012 2 / 16

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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