Product Information

PMST2369

PMST2369 electronic component of Nexperia

Datasheet
TRANSISTOR, NPN, 15V, 500MHZ, SOT-323

Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.3224 ea
Line Total: USD 1.61

0 - Global Stock
MOQ: 5  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 08 May to Tue. 14 May

MOQ : 5
Multiples : 1

Stock Image

PMST2369
Nexperia

5 : USD 0.3224
10 : USD 0.2158
100 : USD 0.0895
500 : USD 0.0697
1000 : USD 0.049
5000 : USD 0.0447

     
Manufacturer
Product Category
Transistor Polarity
Brand
Collector Emitter Voltage Vbrceo
Transition Frequency Ft
Power Dissipation Pd
Dc Collector Current
Dc Current Gain Hfe
Transistor Case Style
No. Of Pins
Operating Temperature Max
Msl
Svhc
LoadingGif

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DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D187 PMST2369 NPN switching transistor Product data sheet 1999 Apr 22 Supersedes data of 1997 May 05 NXP Semiconductors Product data sheet NPN switching transistor PMST2369 FEATURES PINNING Low current (max. 200 mA) PIN DESCRIPTION Low voltage (max. 15 V). 1 base 2 emitter APPLICATIONS 3 collector High-speed switching applications, primarily in portable and consumer equipment. 3 handbook, halfpage DESCRIPTION 3 NPN switching transistor in a SOT323 plastic package. 1 MARKING (1) 2 TYPE NUMBER MARKING CODE 1 2 PMST2369 1J Top view MAM062 Note 1. = - : Made in Hong Kong. Fig.1 Simplified outline (SOT323) and symbol. = t : Made in Malaysia. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V collector-base voltage open emitter 40 V CBO V collector-emitter voltage open base 15 V CEO V emitter-base voltage open collector 5 V EBO I collector current (DC) 200 mA C I peak collector current t 10 s 300 mA CM p I peak base current 100 mA BM P total power dissipation T 25 C note 1 200 mW tot amb T storage temperature 65 +150 C stg T junction temperature 150 C j T operating ambient temperature 65 +150 C amb Note 1. Transistor mounted on an FR4 printed-circuit board. 1999 Apr 22 2

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