PMST4403,115 Nexperia

PMST4403,115 electronic component of Nexperia
PMST4403,115 Nexperia
PMST4403,115 Bipolar Transistors - BJT
PMST4403,115  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of PMST4403,115 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. PMST4403,115 Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. PMST4403,115
Manufacturer: Nexperia
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor PNP 40 V 600 mA 200MHz 200 mW Surface Mount SOT-323
Datasheet: PMST4403,115 Datasheet (PDF)
Price (USD)
20: USD 0.0506 ea
Line Total: USD 1.01 
Availability : 3065
  
Ship by Mon. 24 Nov to Fri. 28 Nov
QtyUnit Price
20$ 0.0506
200$ 0.0432
600$ 0.0291
3000$ 0.0238
9000$ 0.0223
21000$ 0.0215

Availability 3065
Ship by Mon. 24 Nov to Fri. 28 Nov
MOQ : 20
Multiples : 20
QtyUnit Price
20$ 0.0506
200$ 0.0432
600$ 0.0291
3000$ 0.0238
9000$ 0.0223
21000$ 0.0215

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PMST4403,115 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PMST4403,115 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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PMST4403 40 V, 600 mA PNP switching transistor 1 August 2016 Product data sheet 1. General description PNP switching transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. NPN complement: PMST4401 2. Features and benefits General purpose switching transistor AEC-Q101 qualified 3. Applications Switching and linear amplification. 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter open base - - -40 V CEO voltage I collector current - - -600 mA C h DC current gain V = -2 V I = -150 mA pulsed t 100 - 300 FE CE C p 300 s 0.02 T = 25 C amb 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 3 1 B base C 2 E emitter B 3 C collector E sym132 1 2 SC-70 (SOT323)Nexperia PMST4403 40 V, 600 mA PNP switching transistor 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMST4403 SC-70 plastic surface-mounted package 3 leads SOT323 7. Marking Table 4. Marking codes Type number Marking code 1 PMST4403 %2T 1 % = placeholder for manufacturing site code 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V collector-base voltage open emitter - -40 V CBO V collector-emitter voltage open base - -40 V CEO V emitter-base voltage open collector - -5 V EBO I collector current - -600 mA C I peak collector current single pulse t 1 ms - -800 mA CM p I peak base current - -200 mA BM P total power dissipation T 25 C 1 - 200 mW tot amb T junction temperature - 150 C j T ambient temperature -65 150 C amb T storage temperature -65 150 C stg 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. PMST4403 All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 1 August 2016 2 / 13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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