X-On Electronics has gained recognition as a prominent supplier of PMV20XNEAR MOSFETs across the USA, India, Europe, Australia, and various other global locations. PMV20XNEAR MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PMV20XNEAR Nexperia

PMV20XNEAR electronic component of Nexperia
PMV20XNEAR Nexperia
PMV20XNEAR MOSFETs
PMV20XNEAR  Semiconductors

Images are for reference only
See Product Specifications
Part No. PMV20XNEAR
Manufacturer: Nexperia
Category: MOSFETs
Description: Trans MOSFET N-CH 20V 6.3A 3-Pin TO-236AB T/R
Datasheet: PMV20XNEAR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.6326 ea
Line Total: USD 0.63 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 13 Jun to Thu. 19 Jun
MOQ : 3000
Multiples : 3000
3000 : USD 0.1324
6000 : USD 0.1283
9000 : USD 0.1117
24000 : USD 0.1094

0
Ship by Fri. 13 Jun to Thu. 19 Jun
MOQ : 286
Multiples : 1
286 : USD 0.2345
1000 : USD 0.2104
3000 : USD 0.1726
6000 : USD 0.1572
9000 : USD 0.1392
24000 : USD 0.1362

0
Ship by Fri. 13 Jun to Thu. 19 Jun
MOQ : 5
Multiples : 1
5 : USD 0.4414
50 : USD 0.3129
100 : USD 0.1998
500 : USD 0.1966
1500 : USD 0.1925

0
Ship by Fri. 13 Jun to Thu. 19 Jun
MOQ : 3000
Multiples : 3000
3000 : USD 0.1243

0
Ship by Fri. 20 Jun to Wed. 25 Jun
MOQ : 1
Multiples : 1
1 : USD 0.476
10 : USD 0.3871
30 : USD 0.3476
100 : USD 0.3002
500 : USD 0.2805
1000 : USD 0.2667

0
Ship by Wed. 11 Jun to Fri. 13 Jun
MOQ : 1
Multiples : 1
1 : USD 0.6326
10 : USD 0.3834
100 : USD 0.2194
500 : USD 0.1659
1000 : USD 0.1522
3000 : USD 0.1329
6000 : USD 0.1091
9000 : USD 0.1045
24000 : USD 0.1034

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PMV20XNEAR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PMV20XNEAR and other electronic components in the MOSFETs category and beyond.

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PMV20XNEA 20 V, N-channel Trench MOSFET 9 March 2016 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM AEC-Q101 qualified 3. Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - 20 V DS j V gate-source voltage -12 - 12 V GS I drain current V = 4.5 V T = 25 C 1 - - 6.3 A D GS amb Static characteristics R drain-source on-state V = 4.5 V I = 6.3 A T = 25 C - 16 20 m DSon GS D j resistance 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad 2 for drain 6 cm .Nexperia PMV20XNEA 20 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 3 D 1 G gate 2 S source 3 D drain G 1 2 TO-236AB (SOT23) S 017aaa255 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMV20XNEA TO-236AB plastic surface-mounted package 3 leads SOT23 7. Marking Table 4. Marking codes Type number Marking code 1 PMV20XNEA DT% 1 % = placeholder for manufacturing site code PMV20XNEA All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 9 March 2016 2 / 16

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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