X-On Electronics has gained recognition as a prominent supplier of PMV45EN2R MOSFETs across the USA, India, Europe, Australia, and various other global locations. PMV45EN2R MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PMV45EN2R Nexperia

PMV45EN2R electronic component of Nexperia
PMV45EN2R Nexperia
PMV45EN2R MOSFETs
PMV45EN2R  Semiconductors

Images are for reference only
See Product Specifications
Part No. PMV45EN2R
Manufacturer: Nexperia
Category: MOSFETs
Description: N-Channel 30 V 4.1A (Ta) 510mW (Ta), 5W (Tc) Surface Mount TO-236AB
Datasheet: PMV45EN2R Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.1858 ea
Line Total: USD 0.93 
Availability - 47588
Ship by Mon. 26 May to Thu. 29 May
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
261900
Ship by Mon. 19 May to Fri. 23 May
MOQ : 6000
Multiples : 3000
6000 : USD 0.0802
9000 : USD 0.0751
12000 : USD 0.0747
30000 : USD 0.0731
45000 : USD 0.0715

47588
Ship by Mon. 26 May to Thu. 29 May
MOQ : 5
Multiples : 5
5 : USD 0.1858
50 : USD 0.149
150 : USD 0.1286
500 : USD 0.0787
6000 : USD 0.0677
9000 : USD 0.0665

3868
Ship by Thu. 15 May to Mon. 19 May
MOQ : 1
Multiples : 1
1 : USD 0.546
10 : USD 0.385
50 : USD 0.2856
100 : USD 0.2492
148 : USD 0.126

2861
Ship by Mon. 19 May to Fri. 23 May
MOQ : 2208
Multiples : 1
2208 : USD 0.1178

95525
Ship by Mon. 19 May to Fri. 23 May
MOQ : 3917
Multiples : 1
3917 : USD 0.1198
10000 : USD 0.1067
100000 : USD 0.0894

5795
Ship by Mon. 19 May to Fri. 23 May
MOQ : 3247
Multiples : 1
3247 : USD 0.0801
3460 : USD 0.0752

81480
Ship by Mon. 19 May to Fri. 23 May
MOQ : 6000
Multiples : 3000
6000 : USD 0.0801

212430
Ship by Mon. 19 May to Fri. 23 May
MOQ : 3000
Multiples : 3000
3000 : USD 0.1089
6000 : USD 0.0979
24000 : USD 0.0694

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the PMV45EN2R from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PMV45EN2R and other electronic components in the MOSFETs category and beyond.

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The PMV45EN2R is an N-Channel Transistor from Nexperia. It is a surface-mount device designed in the TO-236AB package. It has a drain-source voltage rating of 30V, providing 4.1A continuous drain current (at 25ºC junction temperature) with a maximum power dissipation of 510mW (at 25ºC ambient temperature). It has a maximum power dissipation of 5W at the case temperature of 25ºC. This high-performance transistor is designed for use in high-voltage, high-speed switching applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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