Product Information

PMV65XPVL

PMV65XPVL electronic component of Nexperia

Datasheet
MOSFET PMV65XP/TO-236AB/REEL 11" Q3/T
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.5293 ea
Line Total: USD 0.53

6774 - Global Stock
Ships to you between
Fri. 31 May to Tue. 04 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
25008 - WHS 1


Ships to you between Fri. 31 May to Tue. 04 Jun

MOQ : 1
Multiples : 1

Stock Image

PMV65XPVL
Nexperia

1 : USD 0.4307
10 : USD 0.3049
100 : USD 0.1364
1000 : USD 0.0973
2500 : USD 0.0926
10000 : USD 0.0688
20000 : USD 0.0653
50000 : USD 0.0641

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Taric
LoadingGif

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Additional Infomation About Product

PMV65XP 20 V, single P-channel Trench MOSFET 12 February 2013 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Low on-state resistance Trench MOSFET technology 3. Applications Low power DC-to-DC converters Load switching Battery management Battery powered portable equipment 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - -20 V DS j V gate-source voltage -12 - 12 V GS I drain current V = -4.5 V T = 25 C - - -4.3 A D GS sp Static characteristics R drain-source on-state V = -4.5 V I = -2.8 A T = 25 C - 58 74 m DSon GS D j resistanceNexperia PMV65XP 20 V, single P-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol D 1 G gate 3 2 S source G 3 D drain 1 2 S TO-236AB (SOT23) 017aaa257 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMV65XP TO-236AB plastic surface-mounted package 3 leads SOT23 7. Marking Table 4. Marking codes Type number Marking code 1 PMV65XP %M9 1 % = placeholder for manufacturing site code 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T = 25 C - -20 V DS j V gate-source voltage -12 12 V GS I drain current V = -4.5 V T = 25 C - -4.3 A D GS sp V = -4.5 V T = 25 C 1 - -2.8 A GS amb V = -4.5 V T = 100 C 1 - -1.8 A GS amb I peak drain current T = 25 C single pulse t 10 s - -16 A DM amb p P total power dissipation T = 25 C 2 - 480 mW tot amb 1 - 833 mW T = 25 C - 4165 mW sp PMV65XP All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 12 February 2013 2 / 14

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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