PMXB350UPE Nexperia

PMXB350UPE electronic component of Nexperia
PMXB350UPE Nexperia
PMXB350UPE MOSFETs
PMXB350UPE  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of PMXB350UPE MOSFETs across the USA, India, Europe, Australia, and various other global locations. PMXB350UPE MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. PMXB350UPE
Manufacturer: Nexperia
Category: MOSFETs
Description: MOSFET, P-CH, -20V, -1.2A, DFN1010D-3
Datasheet: PMXB350UPE Datasheet (PDF)
Price (USD)
100: USD 0.1572 ea
Line Total: USD 15.72 
Availability : 0
  
QtyUnit Price
100$ 0.1572
500$ 0.1367
1000$ 0.1221
5000$ 0.1042

Availability 0
Ship by Thu. 14 Aug to Wed. 20 Aug
MOQ : 100
Multiples : 1
QtyUnit Price
100$ 0.1572
500$ 0.1367
1000$ 0.1221
5000$ 0.1042

   
Manufacturer
Product Category
Transistor Polarity
Brand
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No. Of Pins
Operating Temperature Max
Msl
Svhc
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PMXB350UPE from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PMXB350UPE and other electronic components in the MOSFETs category and beyond.

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PMXB350UPE 20 V, P-channel Trench MOSFET 24 January 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Leadless ultra small and ultra thin SMD plastic package: 1.1 1.0 0.37 mm Exposed drain pad for excellent thermal conduction ElectroStatic Discharge (ESD) protection 1 kV HBM Drain-source on-state resistance R = 350 m DSon 3. Applications High-side load switch and charging switch for portable devices Power management in battery driven portables LED driver DC-to-DC converter 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - -20 V DS j V gate-source voltage -8 - 8 V GS I drain current V = -4.5 V T = 25 C 1 - - -1.2 A D GS amb Static characteristics R drain-source on-state V = -4.5 V I = -1.2 A T = 25 C - 350 447 m DSon GS D j resistance 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 6 cm . Scan or click this QR code to view the latest information for this product DFN1010D-3NXP Semiconductors PMXB350UPE 20 V, P-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol D 1 G gate 1 2 S source 3 D drain 4 3 G 4 D drain 2 S Transparent top view 017aaa259 DFN1010D-3 (SOT1215) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMXB350UPE DFN1010D-3 DFN1010D-3: plastic thermal enhanced ultra thin small outline SOT1215 package no leads 3 terminals body 1.1 x 1.0 x 0.37 mm 7. Marking Table 4. Marking codes Type number Marking code PMXB350UPE 11 10 00 READING DIRECTION MARKING CODE (EXAMPLE) YEAR DATE CODE VENDOR CODE PIN 1 MARK-FREE AREA INDICATION MARK READING EXAMPLE: 11 01 10 aaa-008041 Fig. 1. DFN1010D-3 (SOT1215) binary marking code description PMXB350UPE All information provided in this document is subject to legal disclaimers. NXP N.V. 2014. All rights reserved Product data sheet 24 January 2014 2 / 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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