TM IXFH 7N90Q V = 900 V HiPerFET DSS IXFT 7N90Q I = 7 A Power MOSFETs D25 R = 1.5 DS(on) Q-Class N-Channel Enhancement Mode t 250 ns rr Avalanche Rated, Low Q , High dv/dt g Preliminary Data Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) V T = 25C to 150C 900 V DSS J V T = 25C to 150C R = 1 M 900 V DGR J GS V Continuous 20 V GS V Transient 30 V GSM I T = 25C 7 A D25 C I T = 25C, 28 A DM C pulse width limited by T TO-268 (D3) ( IXFT) JM I T = 25C7A AR C E T = 25C20mJ AR C E 700 mJ AS G (TAB) dv/dt I I , di/dt 100 A/ s, V V , 5 V/ns S S DM DD DSS T 150C, R = 2 J G P T = 25C 180 W D C G = Gate D = Drain T -55 ... +150 C J S = Source TAB = Drain T 150 C JM T -55 ... +150 C stg T 1.6 mm (0.063 in) from case for 10 s 300 C L M Mounting torque 1.13/10 Nm/lb.in. d Features Weight TO-247 6 g TO-268 4 g z IXYS advanced low Q process g z Low gate charge and capacitances Symbol Test Conditions Characteristic Values - easier to drive (T = 25C, unless otherwise specified) J - faster switching min. typ. max. z International standard packages z V V = 0 V, I = 1 mA 900 V Low R DSS GS D DS (on) z Unclamped Inductive Switching (UIS) rated V V = V , I = 2.5 mA 3.0 5.0 V GS(th) DS GS D z Molding epoxies meet UL 94 V-0 flammability classification I V = 20 V , V = 0 100 nA GSS GS DC DS Advantages I V = 0.8 V T = 25C50 A DSS DS DSS J V = 0 V T = 125C1mA GS J z Easy to mount R V = 10 V, I = 0.5 I 1.5 DS(on) GS D D25 z Space savings Pulse test, t 300 s, duty cycle d 2 % z High power density 2002 IXYS All rights reserved DS98645A(12/02)IXFH 7N90Q IXFT 7N90Q Symbol Test Conditions Characteristic Values TO-247 AD (IXFH) Outline (T = 25C, unless otherwise specified) J min. typ. max. g V = 10 V I = 0.5 I , pulse test 3 6 S fs DS D D25 1 2 3 C 2200 pF iss Terminals: 1 - Gate C V = 0 V, V = 25 V, f = 1 MHz 210 pF oss GS DS 2 - Drain 3 - Source C 35 pF rss Tab - Drain t 15 ns d(on) t V = 10 V, V = 0.5 V , I = 0.5 I 15 ns r GS DS DSS D D25 t R = 4.7 (External), 42 ns Dim. Millimeter Inches d(off) G Min. Max. Min. Max. t 13 ns f A 4.7 5.3 .185 .209 A 2.2 2.54 .087 .102 1 Q 56 nC A 2.2 2.6 .059 .098 2 g(on) b 1.0 1.4 .040 .055 Q V = 10 V, V = 0.5 V , I = 0.5 I 18 nC gs GS DS DSS D D25 b 1.65 2.13 .065 .084 1 b 2.87 3.12 .113 .123 2 Q 24 nC gd C .4 .8 .016 .031 D 20.80 21.46 .819 .845 R 0.7 K/W thJC E 15.75 16.26 .610 .640 R (TO-247) 0.25 K/W e 5.20 5.72 0.205 0.225 thCK L 19.81 20.32 .780 .800 L1 4.50 .177 P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 Source-Drain Diode Characteristic Values R 4.32 5.49 .170 .216 (T = 25C, unless otherwise specified) S 6.15 BSC 242 BSC J Symbol Test Conditions min. typ. max. I V = 0 V 7 A TO-268 Outline S GS I Repetitive pulse width limited by T 28 A SM JM V I = I , V = 0 V, 1.5 V SD F S GS Pulse test, t 300 s, duty cycle d 2 % t 250 ns rr Q I = I , -di/dt = 100 A/ s, V = 100 V 0.75 C RM F S R I 5.5 A RM Terminals: 1 - Gate 2 - Drain 3 - Source Tab - Drain IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025