PQMH10 Nexperia

PQMH10 NPN/NPN resistor-equipped transistors R1 = 2.2 k, R2 = 47 k 4 November 2015 Product data sheet 1. General description NPN/NPN Resistor-Equipped Transistors (RET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PQMD10. 2. Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit design Low package height of 0.37 mm Reduces component count Reduces pick and place costs AEC-Q101 qualified 3. Applications Low current peripheral driver Control of IC inputs Replaces general-purpose transistors in digital applications Mobile applications 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor V collector-emitter open base - - 50 V CEO voltage I output current - - 100 mA O Per transistor R1 bias resistor 1 T = 25 C 1 1.54 2.2 2.86 k amb R2/R1 bias resistor ratio 1 17 21 26 1 See sectionTest informatio for resistor calculation and test conditions. Scan or click this QR code to view the latest information for this product DFN1010B- 6NXP Semiconductors PQMH10 NPN/NPN resistor-equipped transistors R1 = 2.2 k, R2 = 47 k 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol O1 I2 GND2 1 GND1 GND (emitter) TR1 1 6 7 2 I1 input ( base) TR1 R1 R2 3 O2 output (collector) TR2 2 5 TR2 4 GND2 GND (emitter) TR2 TR1 8 3 4 R2 R1 5 I2 input ( base) TR2 6 O1 output (collector) TR1 Transparent top view GND1 I1 O2 7 O1 output (collector) TR1 DFN1010B-6 (SOT1216) aaa-019894 8 O2 output (collector) TR2 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PQMH10 DFN1010B-6 DFN1010B-6: plastic thermal enhanced ultra thin small SOT1216 outline package no leads 6 terminals PQMH10 All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 2015. All rights reserved Product data sheet 4 November 2015 2 / 14