Product Information

PSMN021-100YLX

PSMN021-100YLX electronic component of Nexperia

Datasheet
MOSFET PSMN021-100YL/LFPAK/REEL 7" Q1
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.9623 ea
Line Total: USD 0.96

1151 - Global Stock
Ships to you between
Thu. 30 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
1455 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1500
Multiples : 1500

Stock Image

PSMN021-100YLX
Nexperia

1500 : USD 0.4904
3000 : USD 0.4806
9000 : USD 0.4806
24000 : USD 0.4806

2906 - WHS 2


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

PSMN021-100YLX
Nexperia

1 : USD 0.6616
10 : USD 0.6549
25 : USD 0.6055
100 : USD 0.5112
250 : USD 0.5009
500 : USD 0.5009
1000 : USD 0.5009

1151 - WHS 3


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

Stock Image

PSMN021-100YLX
Nexperia

1 : USD 0.9623
10 : USD 0.7997
100 : USD 0.6514
500 : USD 0.5695
1000 : USD 0.5138
1500 : USD 0.4865
3000 : USD 0.4604
9000 : USD 0.4366
24000 : USD 0.4354

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Brand
Factory Pack Quantity :
Configuration
Transistor Type
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Additional Infomation About Product

PSMN021-100YL N-channel 100 V, 21 m logic level MOSFET in LFPAK56 4 November 2016 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product is designed and qualified for use in a wide range of power supply & motor control equipment. 2. Features and benefits Advanced TrenchMOS provides low R and low gate charge DSon Logic level gate operation Avalanche rated, 100 % tested LFPAK provides maximum power density in a Power SO8 package 3. Applications Synchronous rectification in power supply equipment Chargers & adaptors with V < 10 V out Fast charge & USB-PD applications Battery powered motor control LED lighting & TV backlight 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage 25 C T 175 C - - 100 V DS j I drain current V = 5 V T = 25 C Fig. 2 - - 49 A D GS mb P total power dissipation T = 25 C Fig. 1 - - 147 W tot mb Static characteristics R drain-source on-state V = 5 V I = 15 A T = 25 C Fig. 11 - 17.4 22 m DSon GS D j resistance Dynamic characteristics Q gate-drain charge I = 15 A V = 80 V V = 5 V - 13.3 - nC GD D DS GS T = 25 C Fig. 13 Fig. 14 jNexperia PSMN021-100YL N-channel 100 V, 21 m logic level MOSFET in LFPAK56 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 S source mb D 2 S source G 3 S source mbb076 S 4 G gate 1 2 3 4 mb D mounting base connected to LFPAK56 Power- drain SO8 (SOT669) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN021-100YL LFPAK56 Plastic single-ended surface-mounted package SOT669 Power-SO8 (LFPAK56 Power-SO8) 4 leads 7. Marking Table 4. Marking codes Type number Marking code PSMN021-100YL 21L100 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage 25 C T 175 C - 100 V DS j V drain-gate voltage R = 20 k - 100 V DGR GS V gate-source voltage -20 20 V GS P total power dissipation T = 25 C Fig. 1 - 147 W tot mb I drain current V = 5 V T = 25 C Fig. 2 - 49 A D GS mb V = 5 V T = 100 C Fig. 2 - 35 A GS mb I peak drain current pulsed t 10 s T = 25 C Fig. 3 - 197 A DM p mb T storage temperature -55 175 C stg PSMN021-100YL All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 4 November 2016 2 / 13

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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