PSMN0R9-25YLC,115 Nexperia

PSMN0R9-25YLC,115 electronic component of Nexperia
PSMN0R9-25YLC,115 Nexperia
PSMN0R9-25YLC,115 MOSFETs
PSMN0R9-25YLC,115  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of PSMN0R9-25YLC,115 MOSFETs across the USA, India, Europe, Australia, and various other global locations. PSMN0R9-25YLC,115 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. PSMN0R9-25YLC,115
Manufacturer: Nexperia
Category: MOSFETs
Description: MOSFET N-Ch 25V 0.99 mOhms
Datasheet: PSMN0R9-25YLC,115 Datasheet (PDF)
Price (USD)
281: USD 1.3928 ea
Line Total: USD 391.38 
Availability : 0
  
QtyUnit Price
281$ 1.3928
500$ 1.2054
1000$ 1.1116
10000$ 0.9911
100000$ 0.8304

Availability 1455
Ship by Mon. 11 Aug to Fri. 15 Aug
MOQ : 1500
Multiples : 1500
QtyUnit Price
1500$ 0.8688
3000$ 0.8562
4500$ 0.8438


Availability 3262
Ship by Thu. 07 Aug to Mon. 11 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 2.1625
10$ 1.452
100$ 0.9812
500$ 0.9339
1000$ 0.847
1500$ 0.8239
3000$ 0.8041
9000$ 0.8041
24000$ 0.8041


Availability 16005
Ship by Mon. 11 Aug to Fri. 15 Aug
MOQ : 281
Multiples : 1
QtyUnit Price
281$ 1.3928
500$ 1.2054
1000$ 1.1116
10000$ 0.9911
100000$ 0.8304


Availability 334
Ship by Mon. 11 Aug to Fri. 15 Aug
MOQ : 273
Multiples : 1
QtyUnit Price
273$ 0.9533


Availability 99910
Ship by Mon. 11 Aug to Fri. 15 Aug
MOQ : 281
Multiples : 1
QtyUnit Price
281$ 1.3928
500$ 1.2054
1000$ 1.1116
10000$ 0.9911
100000$ 0.8304


Availability 1455
Ship by Mon. 11 Aug to Fri. 15 Aug
MOQ : 1500
Multiples : 1500
QtyUnit Price
1500$ 0.7161
3000$ 0.709

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
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Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Gate Charge Qg
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Factory Pack Quantity :
Typical Turn-Off Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PSMN0R9-25YLC,115 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PSMN0R9-25YLC,115 and other electronic components in the MOSFETs category and beyond.

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PSMN0R9-25YLC N-channel 25 V 0.99 m logic level MOSFET in LFPAK using NextPower technology Rev. 2 4 July 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High reliability Power SO8 package, Ultra low QG, QGD and QOSS for high qualified to 175C system efficiencies at low and high loads Optimised for 4.5V Gate drive utilising NextPower Superjunction technology Ultra low Rdson and low parasitic inductance 1.3 Applications DC-to-DC converters Power OR-ing Lithium-ion battery protection Server power supplies Load switching Sync rectifier 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage 25 C T 175 C - - 25 V DS j 1 I drain current T = 25 C see Figure 1 --100A D mb P total power dissipation T = 25 C see Figure 2 --272W tot mb T junction temperature -55 - 175 C j Static characteristics R drain-source on-state V = 4.5 V I =25A - 0.95 1.25 m DSon GS D resistance T = 25 C see Figure 12 j V =10V I =25A - 0.75 0.99 m GS D T = 25 C see Figure 12 jPSMN0R9-25YLC Nexperia N-channel 25 V 0.99 m logic level MOSFET in LFPAK using NextPower technology Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit Dynamic characteristics Q gate-drain charge V = 4.5 V I =25A -14 -nC GD GS D V =12V see Figure 14 DS see Figure 15 Q total gate charge V = 4.5 V I =25A -51 -nC G(tot) GS D V =12V see Figure 15 DS see Figure 14 1 Continuous current is limited by package 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S source mb D 2S source 3S source G 4 G gate mbb076 S mb D mounting base connected to drain 1234 SOT669 (LFPAK Power-SO8) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN0R9-25YLC LFPAK Power-SO8 plastic single-ended surface-mounted package 4 leads SOT669 PSMN0R9-25YLC All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 4 July 2011 2 of 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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