X-On Electronics has gained recognition as a prominent supplier of PSMN0R9-25YLC,115 MOSFETs across the USA, India, Europe, Australia, and various other global locations. PSMN0R9-25YLC,115 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PSMN0R9-25YLC,115 Nexperia

PSMN0R9-25YLC,115 electronic component of Nexperia
PSMN0R9-25YLC,115 Nexperia
PSMN0R9-25YLC,115 MOSFETs
PSMN0R9-25YLC,115  Semiconductors

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See Product Specifications
Part No. PSMN0R9-25YLC,115
Manufacturer: Nexperia
Category: MOSFETs
Description: MOSFET N-Ch 25V 0.99 mOhms
Datasheet: PSMN0R9-25YLC,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1500: USD 0.8438 ea
Line Total: USD 1265.7 
Availability - 1455
Ship by Thu. 26 Jun to Wed. 02 Jul
MOQ: 1500  Multiples: 1500
Pack Size: 1500
Availability Price Quantity
1455
Ship by Thu. 26 Jun to Wed. 02 Jul
MOQ : 1500
Multiples : 1500
1500 : USD 0.8438
3000 : USD 0.8375
4500 : USD 0.825
6000 : USD 0.8187

65849
Ship by Tue. 24 Jun to Thu. 26 Jun
MOQ : 1
Multiples : 1
1 : USD 2.125
10 : USD 1.44
25 : USD 1.2995
100 : USD 0.9537
250 : USD 0.9394
500 : USD 0.8701
1000 : USD 0.8525
1500 : USD 0.8294
3000 : USD 0.8239

16005
Ship by Thu. 26 Jun to Wed. 02 Jul
MOQ : 351
Multiples : 1
351 : USD 1.3393
500 : USD 1.2054
1000 : USD 1.1116
10000 : USD 0.9911
100000 : USD 0.8304

334
Ship by Thu. 26 Jun to Wed. 02 Jul
MOQ : 263
Multiples : 1
263 : USD 0.9909

99910
Ship by Thu. 26 Jun to Wed. 02 Jul
MOQ : 351
Multiples : 1
351 : USD 1.3393
500 : USD 1.2054
1000 : USD 1.1116
10000 : USD 0.9911
100000 : USD 0.8304

1455
Ship by Thu. 26 Jun to Wed. 02 Jul
MOQ : 1500
Multiples : 1500
1500 : USD 0.8823
3000 : USD 0.8735

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
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Maximum Operating Temperature
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Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
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Gate Charge Qg
Rise Time
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Typical Turn-Off Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PSMN0R9-25YLC,115 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PSMN0R9-25YLC,115 and other electronic components in the MOSFETs category and beyond.

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PSMN0R9-25YLC N-channel 25 V 0.99 m logic level MOSFET in LFPAK using NextPower technology Rev. 2 4 July 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High reliability Power SO8 package, Ultra low QG, QGD and QOSS for high qualified to 175C system efficiencies at low and high loads Optimised for 4.5V Gate drive utilising NextPower Superjunction technology Ultra low Rdson and low parasitic inductance 1.3 Applications DC-to-DC converters Power OR-ing Lithium-ion battery protection Server power supplies Load switching Sync rectifier 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage 25 C T 175 C - - 25 V DS j 1 I drain current T = 25 C see Figure 1 --100A D mb P total power dissipation T = 25 C see Figure 2 --272W tot mb T junction temperature -55 - 175 C j Static characteristics R drain-source on-state V = 4.5 V I =25A - 0.95 1.25 m DSon GS D resistance T = 25 C see Figure 12 j V =10V I =25A - 0.75 0.99 m GS D T = 25 C see Figure 12 jPSMN0R9-25YLC Nexperia N-channel 25 V 0.99 m logic level MOSFET in LFPAK using NextPower technology Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit Dynamic characteristics Q gate-drain charge V = 4.5 V I =25A -14 -nC GD GS D V =12V see Figure 14 DS see Figure 15 Q total gate charge V = 4.5 V I =25A -51 -nC G(tot) GS D V =12V see Figure 15 DS see Figure 14 1 Continuous current is limited by package 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S source mb D 2S source 3S source G 4 G gate mbb076 S mb D mounting base connected to drain 1234 SOT669 (LFPAK Power-SO8) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN0R9-25YLC LFPAK Power-SO8 plastic single-ended surface-mounted package 4 leads SOT669 PSMN0R9-25YLC All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 4 July 2011 2 of 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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