X-On Electronics has gained recognition as a prominent supplier of PSMN027-100BS,118 MOSFETs across the USA, India, Europe, Australia, and various other global locations. PSMN027-100BS,118 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PSMN027-100BS,118 Nexperia

PSMN027-100BS,118 electronic component of Nexperia
PSMN027-100BS,118 Nexperia
PSMN027-100BS,118 MOSFETs
PSMN027-100BS,118  Semiconductors

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See Product Specifications
Part No. PSMN027-100BS,118
Manufacturer: Nexperia
Category: MOSFETs
Description: MOSFET N-CH 100V 26.8 MOHM MOSFET
Datasheet: PSMN027-100BS,118 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 4800
Multiples : 800
4800 : USD 0.5673
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 1.134
10 : USD 0.9752
100 : USD 0.7601
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 1.134
10 : USD 0.9752
100 : USD 0.7601
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 1.449
10 : USD 1.1996
100 : USD 0.9597
500 : USD 0.8884
800 : USD 0.7756
2400 : USD 0.7613
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 1.4519
5 : USD 1.3027
16 : USD 0.9919
44 : USD 0.9376
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
Configuration
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the PSMN027-100BS,118 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PSMN027-100BS,118 and other electronic components in the MOSFETs category and beyond.

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PSMN027-100BS N-channel 100V 26.8 m standard level MOSFET in D2PAK. Rev. 2 1 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in D2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching Suitable for standard level gate drive and conduction losses 1.3 Applications DC-to-DC converters Motor control Load switching Server power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 100 V DS j j I drain current T =25C V =10V see Figure 1 --37 A D mb GS P total power dissipation T =25C see Figure 2 - - 103 W tot mb T junction temperature -55 - 175 C j Static characteristics R drain-source on-state V =10V I =15A T = 100 C --48 m DSon GS D j resistance see Figure 12 =10V I =15A T =25C - 21 26.8 m V GS D j see Figure 13 Dynamic characteristics Q gate-drain charge V =10V I =30A V =50V -9 -nC GD GS D DS see Figure 14 see Figure 15 Q total gate charge - 30 - nC G(tot) Avalanche ruggedness E non-repetitive drain-source V =10V T =25C I =37A --59 mJ DS(AL)S GS j(init) D avalanche energy V 100 V unclamped R =50 sup GSPSMN027-100BS Nexperia N-channel 100V 26.8 m standard level MOSFET in D2PAK. 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 1 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 2 13 SOT404 (D2PAK) 1 It is not possible to make connection to pin 2 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN027-100BS D2PAK plastic single-ended surface-mounted package (D2PAK) 3 leads SOT404 (one lead cropped) 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 100 V DS j j V drain-gate voltage T 175 C T 25 C R =20k - 100 V DGR j j GS V gate-source voltage -20 20 V GS I drain current V =10V T = 100 C see Figure 1 -26 A D GS mb V =10V T =25C see Figure 1 -37 A GS mb I peak drain current pulsed t 10 s T =25C - 148 A DM p mb see Figure 3 P total power dissipation T =25C see Figure 2 - 103 W tot mb T storage temperature -55 175 C stg T junction temperature -55 175 C j T peak soldering temperature - 260 C sld(M) Source-drain diode I source current T =25C - 37 A S mb I peak source current pulsed t 10 s T = 25 C - 148 A SM p mb Avalanche ruggedness E non-repetitive drain-source V =10V T =25C I =37A -59 mJ DS(AL)S GS j(init) D avalanche energy V 100 V unclamped R =50 sup GS PSMN027-100BS All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 1 March 2012 2 of 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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