PSMN059-150Y,115 Nexperia

PSMN059-150Y N-channel TrenchMOS SiliconMAX standard level FET 3 October 2013 Product data sheet 1. General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 2. Features and benefits Higher operating power due to low thermal resistance Suitable for high frequency applications due to fast switching characteristics 3. Applications Class D amplifier DC-to-DC converters Motion control Switched-mode power supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 150 C - - 150 V DS j j I drain current T = 25 C V = 10 V Fig. 1 Fig. 3 - - 43 A D mb GS P total power dissipation T = 25 C Fig. 2 - - 113 W tot mb Static characteristics R drain-source on-state V = 10 V I = 12 A T = 25 C - 46 59 m DSon GS D j resistance Fig. 9 Fig. 10 Dynamic characteristics Q gate-drain charge V = 10 V I = 12 A V = 75 V - 9.1 - nC GD GS D DS Fig. 11 Fig. 12Nexperia PSMN059-150Y N-channel TrenchMOS SiliconMAX standard level FET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 S source mb D 2 S source G 3 S source mbb076 S 4 G gate 1 2 3 4 mb D mounting base connected to LFPAK56 Power- drain SO8 (SOT669) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN059-150Y LFPAK56 Plastic single-ended surface-mounted package (LFPAK56 SOT669 Power-SO8 Power-SO8) 4 leads 7. Marking Table 4. Marking codes Type number Marking code PSMN059-150Y 059150 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 150 C - 150 V DS j j V drain-gate voltage T 25 C T 150 C R = 20 - 150 V DGR j j GS V gate-source voltage -20 20 V GS I drain current V = 10 V T = 25 C Fig. 1 Fig. 3 - 43 A D GS mb V = 10 V T = 100 C Fig. 1 - 27.7 A GS mb I peak drain current pulsed t 10 s T = 25 C Fig. 3 - 129 A DM p mb P total power dissipation T = 25 C Fig. 2 - 113 W tot mb T storage temperature -55 150 C stg PSMN059-150Y All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 3 October 2013 2 / 12