PSMN070-200P,127 NXP

PSMN070-200P,127 electronic component of NXP
PSMN070-200P,127 NXP
PSMN070-200P,127 MOSFETs
PSMN070-200P,127  Semiconductors
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X-On Electronics has gained recognition as a prominent supplier of PSMN070-200P,127 MOSFETs across the USA, India, Europe, Australia, and various other global locations. PSMN070-200P,127 MOSFETs are a product manufactured by NXP. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. PSMN070-200P,127
Manufacturer: NXP
Category: MOSFETs
Description: MOSFET RAIL PWR-MOS
Power MOSFET N-channel transistor with a 7A current, 200V drain-source voltage and 127mO resistance.
Datasheet:
Price (USD)
N/A

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Transistor Type
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the PSMN070-200P,127 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PSMN070-200P,127 and other electronic components in the MOSFETs category and beyond.

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PSMN070-200P NXP is a P-channel enhancement mode MOSFET which features an advanced trench process technology and an extension of 2.0V. The device has a drain source voltage rating of 200V and a drain current of 70A at a 25°C temperature. It is designed to provide good on-state RDS(on) and fast switching. It also features a multi-finger cell structure and a low gate charge to enable high-efficiency operation. It is ideally suited for applications such as motor drives, UPS, high-power switching applications and DC-DC converters. The device is provided in a TO-220 package for easy PCB mounting.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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