PSMN3R3-40YS,115 Nexperia

PSMN3R3-40YS,115 electronic component of Nexperia
PSMN3R3-40YS,115 Nexperia
PSMN3R3-40YS,115 MOSFETs
PSMN3R3-40YS,115  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of PSMN3R3-40YS,115 MOSFETs across the USA, India, Europe, Australia, and various other global locations. PSMN3R3-40YS,115 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. PSMN3R3-40YS,115
Manufacturer: Nexperia
Category: MOSFETs
Description: MOSFET N-CHAN 40V 97A
Datasheet: PSMN3R3-40YS,115 Datasheet (PDF)
Price (USD)
1500: USD 0.633 ea
Line Total: USD 949.5 
Availability : 0
  
QtyUnit Price
1500$ 0.633

Availability 0
Ship by Fri. 24 Oct to Thu. 30 Oct
MOQ : 1500
Multiples : 1500
QtyUnit Price
1500$ 0.6205


Availability 0
Ship by Fri. 24 Oct to Thu. 30 Oct
MOQ : 1500
Multiples : 1500
QtyUnit Price
1500$ 0.3339
3000$ 0.3307
4500$ 0.3276
6000$ 0.3244
7500$ 0.3181


Availability 0
Ship by Fri. 24 Oct to Thu. 30 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.494
10$ 0.4824
30$ 0.4746
100$ 0.4689


Availability 0
Ship by Wed. 22 Oct to Fri. 24 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.9375
10$ 1.1868
100$ 0.759
500$ 0.6182
1000$ 0.6171
1500$ 0.5126
24000$ 0.5115


Availability 0
Ship by Fri. 24 Oct to Thu. 30 Oct
MOQ : 1500
Multiples : 1500
QtyUnit Price
1500$ 0.6365


Availability 0
Ship by Fri. 24 Oct to Thu. 30 Oct
MOQ : 1500
Multiples : 1500
QtyUnit Price
1500$ 0.633


Availability 0
Ship by Wed. 22 Oct to Fri. 24 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.8183
5$ 1.6419
13$ 1.2321
35$ 1.1642

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PSMN3R3-40YS,115 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PSMN3R3-40YS,115 and other electronic components in the MOSFETs category and beyond.

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PSMN3R3-40YS N-channel LFPAK 40 V 3.3 m standard level MOSFET Rev. 04 25 October 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS provides low Improved mechanical and thermal RDSon and low gate charge characteristics High efficiency gains in switching LFPAK provides maximum power power converters density in a Power SO8 package 1.3 Applications DC-to-DC convertors Motor control Lithium-ion battery protection Server power supplies Load switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175C --40 V DS j j I drain current T =25C V =10V --100A D mb GS see Figure 1 P total power dissipation T = 25 C see Figure 2 --117W tot mb T junction temperature -55 - 175 C j Static characteristics R drain-source on-state V =10V I =25A --4.5 m DSon GS D resistance T = 100 C see Figure 12 j V =10V I =25A -2.6 3.3 m GS D T =25C see Figure 13 jPSMN3R3-40YS Nexperia N-channel LFPAK 40 V 3.3 m standard level MOSFET Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit Dynamic characteristics Q gate-drain charge V =10V I =25A -11.2-nC GD GS D V =20 V see Figure 14 DS Q total gate charge - 49 - nC G(tot) see Figure 15 Avalanche ruggedness E non-repetitive V =10V T =25C --162mJ DS(AL)S GS j(init) drain-source avalanche I =100 A V 40 V D sup energy unclamped R =50 GS 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S source mb D 2S source 3S source G 4 G gate mbb076 S mb D mounting base connected to 1234 drain SOT669 (LFPAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN3R3-40YS LFPAK plastic single-ended surface-mounted package (LFPAK) 4 leads SOT669 PSMN3R3-40YS All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 04 25 October 2010 2 of 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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