PSMN3R3-80PS,127 Nexperia

PSMN3R3-80PS,127 electronic component of Nexperia
PSMN3R3-80PS,127 Nexperia
PSMN3R3-80PS,127 MOSFETs
PSMN3R3-80PS,127  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of PSMN3R3-80PS,127 MOSFETs across the USA, India, Europe, Australia, and various other global locations. PSMN3R3-80PS,127 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. PSMN3R3-80PS,127
Manufacturer: Nexperia
Category: MOSFETs
Description: MOSFET N-Ch 80V 3.3 m std level MOSFET
Datasheet: PSMN3R3-80PS,127 Datasheet (PDF)
Price (USD)
1: USD 5.6125 ea
Line Total: USD 5.61 
Availability : 0
  
QtyUnit Price
1$ 5.6125
10$ 3.519
100$ 2.607
500$ 2.233
1000$ 2.189

Availability 0
Ship by Fri. 21 Nov to Thu. 27 Nov
MOQ : 5000
Multiples : 1
QtyUnit Price
5000$ 3.625
6000$ 3.5885
10000$ 3.5532
12000$ 3.5167
15000$ 3.4814
20000$ 3.4474
25000$ 3.4121
30000$ 3.3781
50000$ 3.3453


Availability 0
Ship by Fri. 21 Nov to Thu. 27 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 5.7875
10$ 4.9884
100$ 4.0874
500$ 3.4796
1000$ 2.9346
2000$ 2.7879


Availability 0
Ship by Wed. 19 Nov to Fri. 21 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 5.6125
10$ 3.519
100$ 2.607
500$ 2.233
1000$ 2.189


Availability 0
Ship by Wed. 19 Nov to Fri. 21 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 5.8212
3$ 5.2106
4$ 3.9188
11$ 3.7044

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Gate Charge Qg
Rise Time
Factory Pack Quantity :
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PSMN3R3-80PS,127 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PSMN3R3-80PS,127 and other electronic components in the MOSFETs category and beyond.

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PSMN3R3-80PS N-channel 80 V, 3.3 m standard level MOSFET in TO-220 Rev. 1 27 October 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO-220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching Suitable for standard level gate drive and conduction losses 1.3 Applications DC-to-DC converters Motor control Load switch Server power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 80 V DS j j 1 I drain current T =25C V = 10 V see Figure 1 - - 120 A D mb GS P total power dissipation T = 25 C see Figure 2 - - 338 W tot mb T junction temperature -55 - 175 C j Static characteristics R drain-source on-state V =10V I =25 A T =100 C -4.6 5.4 m DSon GS D j resistance see Figure 12 2 =10V I =25 A T =25C -2.8 3.3 m V GS D j see Figure 13 Dynamic characteristics Q gate-drain charge V =10V I =75 A V =40V -27 -nC GD GS D DS see Figure 14 see Figure 15 Q total gate charge - 139 - nC G(tot) Avalanche ruggedness E non-repetitive drain-source V =10V T =25C I = 120 A - - 676 mJ DS(AL)S GS j(init) D avalanche energy V 80 V R =50 unclamped sup GS 1 Continuous current is limited by package. 2 Measured 3 mm from package.PSMN3R3-80PS Nexperia N-channel 80 V, 3.3 m standard level MOSFET in TO-220 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain 3S source G mb D drain mbb076 S 12 3 SOT78 (TO-220AB) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN3R3-80PS TO-220AB plastic single-ended package heatsink mounted 1 mounting SOT78 hole 3-lead TO-220AB PSMN3R3-80PS All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 27 October 2011 2 of 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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