X-On Electronics has gained recognition as a prominent supplier of PSMN3R3-80PS,127 mosfet across the USA, India, Europe, Australia, and various other global locations. PSMN3R3-80PS,127 mosfet are a product manufactured by Nexperia. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

PSMN3R3-80PS,127 Nexperia

PSMN3R3-80PS,127 electronic component of Nexperia
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See Product Specifications
Part No.PSMN3R3-80PS,127
Manufacturer: Nexperia
Category:MOSFET
Description: MOSFET N-Ch 80V 3.3 m std level MOSFET
Datasheet: PSMN3R3-80PS,127 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 5.2929 ea
Line Total: USD 5.29

Availability - 8637
Ships to you between
Tue. 11 Jun to Thu. 13 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
8540 - WHS 1


Ships to you between Tue. 11 Jun to Thu. 13 Jun

MOQ : 1
Multiples : 1
1 : USD 4.0135
10 : USD 3.404
50 : USD 3.266
100 : USD 2.8865
250 : USD 2.714
500 : USD 2.5875
1000 : USD 2.2885
2500 : USD 2.277
5000 : USD 2.185

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Gate Charge Qg
Rise Time
Factory Pack Quantity :
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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PSMN3R3-80PS N-channel 80 V, 3.3 m standard level MOSFET in TO-220 Rev. 1 27 October 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO-220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching Suitable for standard level gate drive and conduction losses 1.3 Applications DC-to-DC converters Motor control Load switch Server power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 80 V DS j j 1 I drain current T =25C V = 10 V see Figure 1 - - 120 A D mb GS P total power dissipation T = 25 C see Figure 2 - - 338 W tot mb T junction temperature -55 - 175 C j Static characteristics R drain-source on-state V =10V I =25 A T =100 C -4.6 5.4 m DSon GS D j resistance see Figure 12 2 =10V I =25 A T =25C -2.8 3.3 m V GS D j see Figure 13 Dynamic characteristics Q gate-drain charge V =10V I =75 A V =40V -27 -nC GD GS D DS see Figure 14 see Figure 15 Q total gate charge - 139 - nC G(tot) Avalanche ruggedness E non-repetitive drain-source V =10V T =25C I = 120 A - - 676 mJ DS(AL)S GS j(init) D avalanche energy V 80 V R =50 unclamped sup GS 1 Continuous current is limited by package. 2 Measured 3 mm from package.PSMN3R3-80PS Nexperia N-channel 80 V, 3.3 m standard level MOSFET in TO-220 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain 3S source G mb D drain mbb076 S 12 3 SOT78 (TO-220AB) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN3R3-80PS TO-220AB plastic single-ended package heatsink mounted 1 mounting SOT78 hole 3-lead TO-220AB PSMN3R3-80PS All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 27 October 2011 2 of 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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