PSMN3R5-80ES,127

PSMN3R5-80ES N-channel 80 V, 3.5 m standard level MOSFET in I2PAK Rev. 02 19 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in I2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching Suitable for standard level gate drive and conduction losses 1.3 Applications DC-to-DC converters Motor control Load switch Server power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175C --80 V DS j j 1 I drain current T =25C V =10V --120A D mb GS see Figure 1 total power T = 25 C see Figure 2 --338W P tot mb dissipation T junction temperature -55 - 175 C j Static characteristics R drain-source on-state V =10V I =25A -5 5.8 m DSon GS D resistance T = 100 C see Figure 12 j 2 V =10V I =25A -3 3.5 m GS D T =25C see Figure 13 j Dynamic characteristics gate-drain charge V =10V I =75A -27 -nC Q GD GS D V =40 V see Figure 14 DS total gate charge - 139 - nC Q G(tot) see Figure 15 Avalanche ruggedness E non-repetitive V =10V T =25C --676mJ DS(AL)S GS j(init) drain-source I =120 A V 80 V D sup avalanche energy R =50 unclamped GSPSMN3R5-80ES Nexperia N-channel 80 V, 3.5 m standard level MOSFET in I2PAK 1 Continuous current is limited by package. 2 Measured 3 mm from package. 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain 3S source G mb D drain mbb076 S 1 2 3 SOT226 (I2PAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN3R5-80ES I2PAK plastic single-ended package (I2PAK) TO-262 SOT226 PSMN3R5-80ES All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 02 19 April 2011 2 of 15